Quantum engineering of transistors based on 2D materials heterostructures

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

doi:10.1038/s41565-018-0082-6

Cited by 377 publications

(281 citation statements)

References 90 publications

(127 reference statements)

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“…3(c) and 3(d)). The nFETs based on PdS 2 and PtS 2 exhibit expected τ and PDP compliant with IRDS requirements for next technology nodes, 10,29 together with an I on /I off ratio close to 10 4 for channel lengths of at least 10 nm, which implies acceptable stand-by power consumption for HP applications. 29 The pFETs have slightly worse PDP and τ than the nFETs, due to the smaller source DOS in the valence band -apparent in Fig.…”

Section: Resultsmentioning

confidence: 82%

“…13 There is an additional advantage of some noble TMDs in their bilayer form: their density of states (DOS) exhibits a steep non-monotonic variation around the Fermi energy that can be used as an energy filtering mechanism in order to obtain a subthreshold swing (SS) of the FET smaller than the Boltzmann limit of 60 mV/decade at room temperature. Indeed, in thermionic FETs the inverse of the maximum slope of the current-voltage characteristics is limited to SS= k B T /q ln (10) per decade, where k B is Boltzmann constant, q is the elementary charge, and T is the absolute temperature. [21][22][23] This provides a room temperature SS value of = 60 mV/decade.…”

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confidence: 99%

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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

et al. 2020

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The bandgap dependence on the number of atomic layers of some families of 2Dmaterials, can be exploited to engineer and use lateral heterostructures (LHs) as highperformance Field-Effect Transistors (FET). This option can provide very good lattice matching as well as high heterointerface quality. More importantly, this bandgap modulation with layer stacking can give rise to steep transitions in the density of states (DOS) of the 2D material, that can eventually be used to achieve sub-60 mV/decade subthreshold swing in LH-FETs thanks to an energy-filtering source. We have observed this effect in the case of a PdS 2 LH-FET due to the particular density of states of its bilayer configuration. Our results are based on ab initio and multiscale materials and device modeling, and incite the exploration of the 2D-material design space in order to find more abrupt DOS transitions and better suitable candidates. 1 arXiv:2001.03139v1 [cond-mat.mes-hall] 9 Jan 2020 Semiconductor heterostructures of the III-V and II-VI materials systems have played a fundamental role in the progress of electronics and optoelectronics. Firstly proposed by Kroemer in the 1950s, 1 they have been involved in the invention of quantum-well lasers 2 and high-electron-mobility transistors. 3 The large number of available two-dimensional (2D) materials and the possibility to combine them even in the presence of significant lattice mismatch has led to a new wave of interest in materials engineering based on heterostructures of 2D materials. In particular, 2D materials enable the realization of vertical heterostructures, also called "van der Waals" heterostructures, consisting in the vertical stacking of layers of different 2D materials loosely coupled by van der Waals interactions, 4,5 and of lateral heterostructures (LHs), in which a single 2D layer consists of juxtaposed regions of different lattice-matched 2D materials. 6-9LHs have been shown to be particularly well suited as channel materials in high performance Field-Effect Transistors (FETs) for digital electronics. 10 However, the quality of the heterojunction is one of the major obstacles towards the experimental demonstration of high performance LH-FETs. The possibility of fabricating LHs by modulating the stacking order of a single 2D material provides the opportunity of perfect lattice matching and growth compatibility, and therefore a chance to obtain high materials quality. 11Recently, a particular group of transition metal dichalcogenides (TMDs) involving noble transition metals (Pt, Pd, and Ni), combined with S, Se, and Te, have been predicted 12 and demonstrated to have strong gap dependence on the number of stacked layers. 13 The so-called "noble TMDs" are, thus, promising contenders to build 2D LHs by modulation of the number of layers of adjacent regions of the same material. Indeed, these structures based on noble TMDs -that strictly speaking could be considered homostructures instead of heterostructures-would be easier to realize than those made of different 2D materials.Ab initio ...

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Section: Resultsmentioning

confidence: 82%

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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

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“…It is formed by stacking the 2D materials layerby-layer via mechanical transfer. [74] Even it is challenging to prepare samples using CVD, the CVD technique is promising for semiconductor industry. [73] To date, the exfoliation is still the most successful method.…”

Section: Vertical Van Der Waals Heterojunctionsmentioning

confidence: 99%

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Qin

Wang

et al. 2018

Adv Elect Materials

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Since the continuous scaling down of the transistor channel length, extraordinary improvement is achieved in the switching speed. However, the rising leakage current degrades the power consumption seriously. In this regard, reducing supply voltage might be the most effective method. This requirement can be fulfilled well by tunnel field‐effect transistors (TFETs), because carriers transport via a band‐to‐band tunneling manner in the TFETs. Relying on the special transport mechanism, the TFETs often require band structure modulations and steep interfaces without trap state, which are challenging for bulk materials. Therefore, these challenges have boosted TFET designs based on low‐dimensional materials ranging from Si/Ge nanowires to state‐of‐art van der Waals heterostructures. Here, the key concepts of the currently developed TFETs are studied from the aspects of structure, material, transportation characteristic, and mechanism. According to the heterojunction bonding types, they can be divided into lateral and vertical TFETs in general. Furthermore, other related transistors based on tunneling are also included. Emerging problems and promotion methods toward these TFETs are introduced with the assistance of simulations. The main goal is to introduce the frontiers of TFET explorations and provide readers with a perspective on how to realize TFET applications in the future.

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“…Graphene is a two‐dimensional material with potential applications in various fields, for example, electronics, optoelectronics, energy and polymer composites . The large scale production of graphene, as well as other 2D materials, is still an open issue, both at the academic and particularly at the industrial level, to guarantee its promising for the aforementioned applications .…”

Section: Introductionmentioning

confidence: 99%

Poly(methyl methacrylate)‐Assisted Exfoliation of Graphite and Its Use in Acrylonitrile‐Butadiene‐Styrene Composites

Gentiluomo

Thorat

Castillo

et al. 2020

Chemistry A European J

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One of the applications of graphene in whichi ts scalable production is of utmost importance is the development of polymer composites. Amongt he techniques used to produce graphene flakes,t he liquid-phase exfoliation (LPE) of graphite stands out due to its versatility and scalability.H owever,s olvents suitable for the LPE processa re generally toxic and have ah igh boilingp oint, making the processing challenging. The use of low boiling point solvents could be convenient for the processing, due to the easiness of their removal. In this study,the use of poly(methyl methacrylate) (PMMA) as as tabilizing agent is proposed for the production of graphene flakes in al ow boiling point solvent, that is, acetone. The graphene dispersions produced in the mixture acetone-PMMA have higherc oncentration, + 175 %, and contain ah igher percentageo ff ew-layer graphene flakes (< 5layers), that is, + 60 %, compared to the dispersions preparedi na cetone. The as-produced graphene dispersions are used to develop graphene/acrylonitrile-butadiene-styrene composites. The mechanical properties of the pristine polymer are improved, that is, + 22 %i nt he Young's modulus, by adding 0.01 wt. %o fg raphene flakes. Moreover, ad ecrease of % 20 %i nt he oxygen permeability is obtained by using 0.1wt. %o fg raphene flakes filler,c ompared to the unloaded matrix.[a] S.Supporting information and the ORCID identification number(s) for the author(s) of this articlecan be found under: https://doi.

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Quantum engineering of transistors based on 2D materials heterostructures

Cited by 377 publications

References 90 publications

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Recent Advances in Low‐Dimensional Heterojunction‐Based Tunnel Field Effect Transistors

Poly(methyl methacrylate)‐Assisted Exfoliation of Graphite and Its Use in Acrylonitrile‐Butadiene‐Styrene Composites

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