“…Imperfections and the environment surrounding the oscillator result in both a finite linewidth ∆ω and a frequency shift δω with respect to the ideal case. Therefore several works have been devoted to the analysis of the different sources of dissipation present in MEMS and NEMS 22,23,24,25,26,27,28,29,30,31,32 , trying to determine the dominant damping mechanisms and ways to minimize them. Among the different mechanisms affecting semiconductor-based NEMS the most important and difficult to avoid are i) clamping losses h L w t The height above the substrate is h. A schematic view of the surface is given, highlighting imperfections like roughness and adsorbates, which dominate dissipation at low temperatures.…”