Quantum Hall effect in a bulk antiferromagnet EuMnBi
            <sub>2</sub>
            with magnetically confined two-dimensional Dirac fermions

Masuda, Hidetoshi; Sakai, Hideaki; Tokunaga, Masashi; Yamasaki, Y.; Miyake, Atsushi; Shiogai, Junichi; Nakamura, Shintaro; Awaji, Satoshi; Tsukazaki, Atsushi; Nakao, Hironori; Murakami, Youichi; Arima, T.; Tokura, Y.; Ishiwata, Shintaro

doi:10.1126/sciadv.1501117

Cited by 220 publications

(273 citation statements)

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“…Topological semimetals (TSMs) have attracted significant attention for their potential in applications in novel electronics . Many TSMs host exceptional electronic properties, ranging from high carrier mobility, large magnetoresistance, to more exotic electron–hole tunneling, chiral magnetotransport phenomena, or bulk half‐integer quantum Hall behavior . TSMs can also exhibit fascinating optical properties, such as frequency‐independent optical conductivity in 2D systems, or linear frequency‐dependent optical conductivity in 3D systems .…”

Section: Introductionmentioning

confidence: 99%

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ

et al. 2019

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Many topological semimetals are known to exhibit exceptional electronic properties, which are the fundamental basis for design of novel devices and further applications. Materials containing the structural motif of a square net are known to frequently be topological semimetals. In this work, the synthesis and structural characterization of the square‐net‐based magnetic topological semimetal candidates GdSbxTe2−x−δ (0≤x≤1, δ indicating the vacancy level) are reported. The structural evolution of the series with Sb substitution is studied, finding a transition between a simple tetragonal square‐net structure to complex superstructure formations due to the presence of charge density waves. The structural modulations coincide with a significant modification of the magnetic order. This work thus establishes GdSbxTe2−x−δ as a platform to study the interplay between crystal symmetry, band filling, charge density wave, and magnetism in a topological semimetal candidate.

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Section: Introductionmentioning

confidence: 99%

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ

et al. 2019

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“…AEMnBi 2 and AEMnSb 2 (AE = Ca, Sr, Ba, Yb, Eu) constitute a new class of Dirac materials [13][14][15][16][17]. Taking SrMnBi 2 as an example, the crystal structure of SrMnBi 2 belongs to the space group I4/mmm, and is comprised of a layer of MnBi consisting of edge-sharing tetrahedra and a Bi square net, separated by an electronegative Sr layer [18,19], as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Two-carrier transport in SrMnBi2 thin films

et al. 2017

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Monocrystalline SrMnBi 2 thin films were grown by molecular beam epitaxy (MBE), and their transport properties were investigated. A high and unsaturated linear magnetoresistance (MR) was observed, which exhibited a transition from a semi-classical weak-field B 2 dependence to a high-field linear dependence. An unusual nonlinear Hall resistance was also observed because of the anisotropic Dirac fermions. The two-carrier model was adopted to analyze the unusual Hall resistance quantitatively. The fitting results yielded carrier densities and mobilities of 3.75 × 10 14 cm −2 and 850 cm 2 ·V −1 ·s −1 , respectively, for holes, and 1.468 × 10 13 cm −2 , 4118 cm 2 ·V −1 ·s −1 , respectively, for electrons, with a hole-dominant conduction at 2.5 K. Hence, an effective mobility can be achieved, which is in reasonable agreement with the effective hole mobility of 1800 cm 2 ·V −1 ·s −1 , extracted from the MR. Further, the angle-dependent MR, proportional to cos θ, where θ is the angle between the external magnetic field and the perpendicular orientation of the sample plane, also implies a high anisotropy of the Fermi surface. Our results about SrMnBi 2 thin films, as one of a new class of AEMnBi 2 and AEMnSb 2 (AE = Ca, Sr, Ba, Yb, Eu) materials, suggest that they have a lot of exotic transport properties to be investigated, and that their high mobility might facilitate electronic device applications.

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“…It has recently been realized that many other families of compounds also have such Dirac-type crossing in bulk and they, however, possess the square-net arrangement of atoms namely Bi square-net in AMnBi2, where A  Sr, Ba, Ca, and Eu [3][4][5], R2O2Bi [6,7] and RAgBi2 [8,9], where R = rare earth or Y, Se and Te square-net in selenene, tellurene and RTe3 [10,11], arsenic square-net in RCuAs2 [12] etc. Evolution of such a Diractype bands crossing upon the inclusion of SOC normally leads to a negligible small gap in graphene [2] while it is large in compounds containing heavy atoms like Bi.…”

Section: Introductionmentioning

confidence: 99%

Unusual magnetotransport from Si-square nets in topological semimetal HfSiS

Kumar

Manna

et al. 2017

Phys. Rev. B

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Abstract:The class of topological semimetals comprises a large pool of compounds. Together they provide a wide platform to realize exotic quasiparticles for example Dirac, nodal line Dirac and Weyl fermions. In this letter, we report the Berry phase, Fermi surface topology and anisotropic magnetoresistance of HfSiS which has recently been predicted to be a nodal line semimetal. This compound contains large carrier density, higher than most of the known semimetals. Massive amplitudes of de Haas-van Alphen and Shubnikov-de Haas oscillations up to 20 K in 7 T assist us in witnessing nontrivial -Berry phase which is a consequence of topological Diractype dispersion of bands originating from the hybridization of px  py and dx2-y2 orbitals of squarenet plane of Si and Hf atoms, respectively. Furthermore, we establish the 3D Fermi-surface which consists of very asymmetric water caltrop-like electron and barley seed-like hole pockets which account for the anisotropic magnetoresistance in HfSiS.

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Quantum Hall effect in a bulk antiferromagnet EuMnBi ₂ with magnetically confined two-dimensional Dirac fermions

Abstract: Quantum transport of quasi–two-dimensional Dirac fermions is largely controlled by magnetic order in a layered magnet.

Cited by 220 publications

References 50 publications

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ

Two-carrier transport in SrMnBi2 thin films

Unusual magnetotransport from Si-square nets in topological semimetal HfSiS

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Quantum Hall effect in a bulk antiferromagnet EuMnBi 2 with magnetically confined two-dimensional Dirac fermions

Abstract: Quantum transport of quasi–two-dimensional Dirac fermions is largely controlled by magnetic order in a layered magnet.

Cited by 220 publications

References 50 publications

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSbxTe2−x−δ

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSbxTe2−x−δ

Two-carrier transport in SrMnBi2 thin films

Unusual magnetotransport from Si-square nets in topological semimetal HfSiS

Contact Info

Product

Resources

About

Quantum Hall effect in a bulk antiferromagnet EuMnBi ₂ with magnetically confined two-dimensional Dirac fermions

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ

Charge Density Waves and Magnetism in Topological Semimetal Candidates GdSb_xTe₂₋_x₋_δ