2003
DOI: 10.1103/physrevb.67.155313
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Quantum Hall ferromagnet in a parabolic well

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Cited by 27 publications
(18 citation statements)
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“…6 that the phonon-induced conductivity is not negligibly small comparing to a typical value of impurity-induced conductivity, which is of the order of the conductance quantum for a partially filled Landau level. The disorder-mediated magnetoconductivity is noticeably smaller in wide parabolic quantum wells, 30 which represent the best system for observation of the discussed effect. Modern experimental techniques should be able to separate the two mechanisms, especially since the phonon-induced contribution to the conductivity has a distinguished two-peak structure and completely different magnetic field and temperature dependencies.…”
Section: ͑36͒mentioning
confidence: 97%
“…6 that the phonon-induced conductivity is not negligibly small comparing to a typical value of impurity-induced conductivity, which is of the order of the conductance quantum for a partially filled Landau level. The disorder-mediated magnetoconductivity is noticeably smaller in wide parabolic quantum wells, 30 which represent the best system for observation of the discussed effect. Modern experimental techniques should be able to separate the two mechanisms, especially since the phonon-induced contribution to the conductivity has a distinguished two-peak structure and completely different magnetic field and temperature dependencies.…”
Section: ͑36͒mentioning
confidence: 97%
“…This is in contrast to more sharply defined features called resistance spikes which have also been observed within persistent minima in AlAs/GaAs, 10 GaAs/GaAlAs, 13 and (Cd,Mn)Te 14 and broad peaks in parabolic GaAs quantum wells which are relatively temperature independent. 11 The broad peak for the InSb system and its temperature evolution is shown in Fig. 2 at a fixed angle, = 65°, for = 2 and r = 1, and = 76.3°for = 3 and r = 2.…”
Section: Resultsmentioning
confidence: 98%
“…Similar observations of persistent minima have been reported in other semiconductor systems. [6][7][8][9][10][11][12][13][14] Particular to the InSb system however, is a broad resistance peak within the persistent minima that grows with increasing temperature. This is in contrast to more sharply defined features called resistance spikes which have also been observed within persistent minima in AlAs/GaAs, 10 GaAs/GaAlAs, 13 and (Cd,Mn)Te 14 and broad peaks in parabolic GaAs quantum wells which are relatively temperature independent.…”
Section: Resultsmentioning
confidence: 99%
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“…Recently, PQW's have been implemented to study non-linear optical properties [10,11], the quantum Hall effect [12,13], charge and spin oscillations in 3D gases [14,15], magnetic properties for the spin electronics [16,17], and band gap discontinuities in materials with outstanding characteristics [18,19].…”
Section: Introductionmentioning
confidence: 99%