Quantum Hall Transport across Monolayer-Bilayer Boundary in Graphene

Tsukuda, A; Okunaga, H; Nakahara, Daisuke; Uchida, Kenzo; Konoike, T.; Osada, Toshiko

doi:10.1088/1742-6596/334/1/012038

Cited by 8 publications

(11 citation statements)

References 7 publications

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“…This signifies the consistency between B 0 -dependent LL spectrum and QHC. Our predicted filling factors of ±4, ±8, • • • are found identical to those in previous theoretical [57,60] and experimental [58] verification.…”

Section: A Monolayer Graphene and Ab Bilayer Graphenesupporting

confidence: 90%

“…Moreover, the size of QHC plateaus becomes smaller for larger and deeper E F , in agreement with alteration of LL energy spacing. The half-integer QHE in graphene has been suggested by different theory groups [55][56][57] and verified by experimental measurements [58,59]. The quantization obtained by our computation method is in accord with previous theoretical and experimental studies for monolayer graphene, indicating the suitability of our proposed model theory in calculating the QHE of this system.…”

Section: A Monolayer Graphene and Ab Bilayer Graphenesupporting

confidence: 86%

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Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

Do,

Shih,

Lin

et al. 2021

Preprint

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We propose a generalized Peierls substitution method in conjunction with the tight-binding model to explore the magnetic quantization and quantum Hall effect in twisted multilayer graphene under a magnetic field. The Bloch-basis tight-binding Hamiltonian is constructed for large twist angle while a simplified tight-binding model is employed for the magic angle. We investigate extensively the band structures, Landau levels (LLs), and quantum Hall conductivity (QHC) of twisted bilayer graphene and twisted double bilayer graphene, as well as their dependence on the twist angle. Comparison between these crucial properties of monolayer graphene, Bernal bilayer graphene, and the twisted systems is carefully made to highlight the roles played by twisting. The unique selection rules of inter-LL transition, which is crucial for achieving a deep understanding of the step structures of QHC, are identified through the properties of LL wave functions. Our theoretical model opens up an opportunity for comprehension of the interplay between an applied magnetic field and the twisting effect associated with multilayer graphene.

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Section: A Monolayer Graphene and Ab Bilayer Graphenesupporting

confidence: 90%

Section: A Monolayer Graphene and Ab Bilayer Graphenesupporting

confidence: 86%

Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

Do,

Shih,

Lin

et al. 2021

Preprint

View full text Add to dashboard Cite

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“…It should be recognized that a heterostructure 35 consisting of monolayer graphene occupying the half space x < 0 and bilayer graphene occupying the other half space x > 0 is rather different from the geometry considered in this paper, where the bilayer exists between 0 < x < L, see Fig. 1, and plays the role of a complicated .…”

mentioning

confidence: 76%

Quantum Hall effect in graphene with twisted bilayer stripe defects

2013

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We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result in large Hall conductivity fluctuations that destroy the quantum Hall plateaux. The fluctuations are a result of the coupling of edge states at opposite edges through currents traversing the stripe. Upon rotation of the second layer with respect to the continuous monolayer (a twisted-bilayer stripe defect), such currents decouple from the extended edge states and develop into long-lived discrete quasi bound states circulating around the perimeter of the stripe. Backscattering of edge modes then occurs only at precise resonant energies, and hence the quantum Hall plateaux are recovered as twist angle grows.

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“…As the SLG and BLG parts possess qualitatively different electronic band structures, such a planar heterostructure between two segments with completely different LL sequences (and different Berry's phases for charge carriers [5]) is fundamentally interesting with no analog in conventional 2DES and may result in novel physics and transport properties. While the QHE of either SLG or BLG has been extensively studied, hybrid SLG-BLG structures [14][15][16][17][18] have received relatively little attention. A recent theoretical work has predicted rich structures in the interface LL in a SLG-BLG junction, but its transport properties have not been studied.…”

mentioning

confidence: 99%

Quantum Hall effect in monolayer-bilayer graphene planar junctions

et al. 2013

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The Hall resistance of a homogeneous electron system is well known to be anti-symmetric with respect to the magnetic field and the sign of charge carriers. We have observed that such symmetries no longer hold in planar hybrid structures consisting of partly single layer graphene (SLG) and partly bilayer graphene (BLG) in the quantum Hall (QH) regime. In particular, the Hall resistance (R 12xy ) across the SLG and BLG interface is observed to exhibit quantized plateaus that switch between those characteristic of SLG QH states and BLG QH states when either the sign of the charge carriers (controlled by a back gate) or the direction of the magnetic field is reversed. Simultaneously reversing both the carrier type and the magnetic field gives rise to the same quantized Hall resistances. The observed SLG-BLG interface QH states, with characteristic asymmetries with respect to the signs of carriers and magnetic field, are determined only by the chirality of the QH edge states and can be explained by a Landauer-Büttiker analysis applied to such graphene hybrid structures involving two regions of different Landau level (LL) structures.

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Quantum Hall Transport across Monolayer-Bilayer Boundary in Graphene

Cited by 8 publications

References 7 publications

Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

Quantum Hall effect in graphene with twisted bilayer stripe defects

Quantum Hall effect in monolayer-bilayer graphene planar junctions

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