Quantum interference effects in titanium nitride films at low temperatures

Roy, Manosi; Mucha, Nikhil Reddy; Ponnam, Rahul; Jaipan, Panupong; Scott‐Emuakpor, Onome; Yarmolenko, Sergey; Majumdar, Amit; Kumar, Dhananjay

doi:10.1016/j.tsf.2019.05.005

Cited by 17 publications

(18 citation statements)

References 37 publications

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“…Subsequent to the fact that all the samples typically exhibit the same thickness (90 -100 nm) and have been deposited at same temperature (300 K), such a variation can be attributed to the suppression of the defects across the film surface and the grain boundary sites due to significant reduction in <E sp > and addition of Ti interface, which in-turn leads to larger grain growth and considerable reduction in porosity of the films. It yields lowering in scattering of the conduction electrons with the defects, which plays a dominant role at ambient temperature [59,60]. The result is in accordance with the XRD data as well, where an inverse proportionality between the crystallite size and the resistivity of the samples can be observed (see SM) [36].…”

Section: Room-temperature Resistivitysupporting

confidence: 83%

Synthesis and study of highly dense and smooth TiN thin films

Chowdhury¹,

Gupta²,

Prakash³

et al. 2020

Preprint

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This study aims towards a systematic reciprocity of the tunable synthesis parameters -partial pressure of N 2 gas, ion energy (E i ) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature (300 K). At the optimum partial pressure of N 2 gas, samples were prepared with or without Ti interface at E i = 1.0 or 0.5 keV. They were characterized using x-ray reflectivity (XRR) to deduce thickness, roughness and density. The roughness of TiN thin films was found to be below 1 nm, when deposited at the lower E i of 0.5 keV and when interfaced with a layer of Ti. Under these conditions, the density of TiN sample reaches to 5.80(±0.03) g cm −3 , a value highest hitherto for any TiN sample. X-ray diffraction and electrical resistivity measurements were performed. It was found that the cumulative effect of the reduction in E i from 1.0 to 0.5 keV and the addition of Ti interface favors (111) oriented growth leading to dense and smooth TiN films and a substantial reduction in the electrical resistivity. The reduction in E i has been attributed to the surface kinetics mechanism (simulated using SRIM) where the available energy of the sputtered species () leaving the target at E i = 0.5 keV is the optimum value favoring the growth of defects free homogeneously distributed films. The electronic structure of samples was probed using N K-edge absorption spectroscopy and the information about the crystal field and spin-orbit splitting confirmed TiN phase formation. In essence, through this work, we demonstrate the role of and Ti interface in achieving highly dense and smooth TiN thin films with low resistivity without the need of a high temperature or substrate biasing during the thin film deposition process.

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Section: Room-temperature Resistivitysupporting

confidence: 83%

Synthesis and study of highly dense and smooth TiN thin films

Chowdhury¹,

Gupta²,

Prakash³

et al. 2020

Preprint

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“…Indeed, the resistivity variation of Cu-doped TiN x O y was less than 5% compared to almost 90% for monocrystalline TiN. , At the same time, the effective resistivity of Cu-doped TiN x O y is higher than in pure TiN. Our R ( T ) data for the G2 sample show a resistivity minimum at 50 K, and the curve shape is quite similar to the pulsed laser-deposited (PLD) single-crystalline TiN by Roy et al, but the absolute values are 30% smaller . The low-temperature negative TCR may originate from the electron–electron interaction, hopping conduction, or 2D weak localization phenomena .…”

Section: Resultssupporting

confidence: 64%

“…Such behavior is a signature of the electron−electron (e−e) interaction or weak scattering on disordered fixed defects that follow a similar law R(T) ≈ aT 0.5 , and coefficient a is known to change sign as a function of disorder. 62,63 It is quite different from both moderately doped semiconductors where scattering is dominated by ionized impurities R(T) ≈ T −1.5 and heavily doped semiconductors, which have positive TCR at low temperatures. 66,67 Figure 8c summarizes the data for resistivity dependence on the oxygen y-content in TiN x O y films grown by different researchers.…”

Section: ■ Results and Discussionmentioning

confidence: 90%

“…Our R(T) data for the G2 sample show a resistivity minimum at 50 K, and the curve shape is quite similar to the pulsed laser-deposited (PLD) single-crystalline TiN by Roy et al, but the absolute values are 30% smaller. 62 The low-temperature negative TCR may originate from the electron−electron interaction, 63 hopping conduction, 40 or 2D weak localization phenomena. 64 The onset of positive TCR at temperatures above 50 K may be either due to electron−phonon or charged-impurity scattering processes.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Structural, Optical, and Electronic Properties of Cu-Doped TiN_xO_y Grown by Ammonothermal Atomic Layer Deposition

Baron

Mikhlin

Мolokeev

et al. 2021

ACS Appl. Mater. Interfaces

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Copper-doped titanium oxynitride (TiN x O y ) thin films were grown by atomic layer deposition (ALD) using the TiCl 4 precursor, NH 3 , and O 2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiN x O y . Such forming gas-mediated Cu-doping of TiN x O y films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C−1 . We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiN x O y surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiN x O y film crystallite average size decrease from 57−59 to 32−34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 10 22 to 3.5(1) × 10 22 cm −3 , and the electron mobility improvement from 0.56(4) to 0.92(2) cm 2 V −1 s −1 . The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiN x O y films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiN x O y films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = − 1.88T 0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiN x O y make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal−oxide−semiconductor integrated circuits.

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“…Some of the military aircraft can contain up to 50% of its fuselage made of titanium alloys. Particularly, TiN films exhibit excellent mechanical properties such as high hardness, wear resistance, high thermal stability, and high chemical stability [19][20][21][22][23][24]. Additionally, TiN thin films are used in many industrial sectors due to its high abrasion resistance, low friction coefficient [25].…”

Section: Introductionmentioning

confidence: 99%

Enhancement in corrosion resistance and vibration damping performance in titanium by titanium nitride coating

et al. 2020

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Titanium nitride (TiN) thin films are deposited on titanium (Ti) substrates by pulsed laser deposition and radio frequency magnetron sputtering. The main goal of this research is to improve the corrosion resistance and the vibration damping performance of the Ti substrates by surface modification of the substrates with TiN thin film coatings. Electrochemical results indicate that TiN films bring about a significant improvement in the corrosion resistance of the Ti disks in phosphate buffer saline solution. It is also observed that TiN deposited at room temperature has the best corrosion efficiency in terms of lower corrosion current density and more positive corrosion potential. From the damping measurements, it is observed that the damping ratios of the TiN-coated beams are one to two orders of magnitude greater than those of uncoated ones. Additionally, the damping amplitudes of the TiN coated beams have been observed to return to zero position faster than the uncoated beam. The energy dissipation due to internal friction at the beam-coating interface and inter-lamellae interface within TiN coatings can be the mechanism responsible for reducing vibration amplitudes of TiN-coated beams.

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Quantum interference effects in titanium nitride films at low temperatures

Cited by 17 publications

References 37 publications

Synthesis and study of highly dense and smooth TiN thin films

Synthesis and study of highly dense and smooth TiN thin films

Structural, Optical, and Electronic Properties of Cu-Doped TiN_xO_y Grown by Ammonothermal Atomic Layer Deposition

Enhancement in corrosion resistance and vibration damping performance in titanium by titanium nitride coating

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Quantum interference effects in titanium nitride films at low temperatures

Cited by 17 publications

References 37 publications

Synthesis and study of highly dense and smooth TiN thin films

Synthesis and study of highly dense and smooth TiN thin films

Structural, Optical, and Electronic Properties of Cu-Doped TiNxOy Grown by Ammonothermal Atomic Layer Deposition

Enhancement in corrosion resistance and vibration damping performance in titanium by titanium nitride coating

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Product

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Structural, Optical, and Electronic Properties of Cu-Doped TiN_xO_y Grown by Ammonothermal Atomic Layer Deposition