Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Lo, Shih-Hsien; Buchanan, D. A.; Taur, Yuan; Wang, W.

doi:10.1109/55.568766

Cited by 770 publications

(351 citation statements)

References 10 publications

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“…In the direct tunneling regime, this translates into a thickness variation of less than 2 Å. 35 The CVs of Fig. 1 indicate that the flatband voltage ͑V fb ͒ is at V gate ϳ 0.3 V. Hence, V fb + 1 V into accumulation for the plotted JVs is at V gate ϳ 1.3 V. Over 90% of the JV characteristics give a leakage current density below 6 ϫ 10 −5 A / cm 2 at V fb + 1 V, confirming the excellent insulating properties of these thin films.…”

Section: -6mentioning

confidence: 99%

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui

Monaghan

Negara

et al. 2008

Journal of Applied Physics

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High dielectric constant hafnium oxide films were formed by electron beam ͑e-beam͒ evaporation on HF last terminated silicon ͑100͒ wafers. We report on the influence of low energy argon plasma ͑ϳ70 eV͒ and oxygen flow rate on the electrical, chemical, and structural properties of metal-insulator-silicon structures incorporating these e-beam deposited HfO 2 films. The use of the film-densifying low energy argon plasma during the deposition results in an increase in the equivalent oxide thickness ͑EOT͒ values. We employ high resolution transmission electron microscopy ͑HRTEM͒, x-ray photoelectron spectroscopy ͑XPS͒, and medium energy ion scattering experiments to investigate and understand the mechanisms leading to the EOT increase. We demonstrate very good agreement between the interfacial silicon oxide thicknesses derived independently from XPS and HRTEM measurements. We find that the e-beam evaporation technique enabled us to control the SiO x interfacial layer thickness down to ϳ6 Å. Very low leakage current density ͑Ͻ10 −4 A / cm 2 ͒ is measured at flatband voltage +1 V into accumulation for an estimated EOT of 10.9Ϯ 0.1 Å. Based on a combined HRTEM and capacitance-voltage ͑CV͒ analysis, employing a quantum-mechanical CV fitting procedure, we determine the dielectric constant ͑k͒ of HfO 2 films, and associated interfacial SiO x layers, formed under various processing conditions. The k values are found to be 21.2 for HfO 2 and 6.3 for the thinnest ͑ϳ6 Å͒ SiO x interfacial layer. The cross-wafer variations in the physical and electrical properties of the HfO 2 films are presented.

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Section: -6mentioning

confidence: 99%

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Cherkaoui

Monaghan

Negara

et al. 2008

Journal of Applied Physics

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“…Fig. 1 reports the diagram of the conduction band across the MOS structure and the first 20 quantized energy levels self-consistently computed inside a uniformly doped MOSFET with doping concentration N/t = lxl0 17 cm" 3 and inversion electron sheet concentration N//vv=6xl0 12 cm . Comparison with a single-gate SOI device, featuring ts/=10 nm and biased for the same inversion layer concentration, shows that in the thin SOI case relevant size quantization occurs, as the energy levels are more separated from each other.…”

Section: Simulated Devices and Resultsmentioning

confidence: 99%

“…In practice, this often means to solve some form of the steady-state Schrodinger equation to find the eigenvalues of the problem, and to spend this information inside a traditional simulator. This has been proposed in different ways [14,15,16,6,17,18,19].…”

Section: The Modeling Frameworkmentioning

confidence: 99%

Quantum effects in the simulation of conventional devices

Abramo

Fiegna

Casarini

1998

Simulation of Semiconductor Processes and Devices 1998

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It is widely known that a fundamental role in the evolution of modern solid-state devices is played by scaling theories. The constant increase of the circuit complexity, the reduction of their dimensions and power consumption, in fact, is made possible mainly due to device shrinking. Of course, this progress wouldn't have happened without the parallel evolution of semiconductor technologies, which, in turn, probably wouldn't have progressed this much if the performance limits of MOS transistors had been reached sooner. Therefore, it is important to understand and try to predict these limits, possibly to avoid them circumventing their origin, ultimately to delay as much as possible the need of a different technology. To this purpose, from the theoretical side it is important to identify the correct physical frame in which investigations have to be performed, with the aim of bridging the gap between experiments and models, and, in essence, to be confident on the prediction ability of the simulation tools. In this paper we focus our attention on the modeling of quantum effects in MOS transistors, presenting some recent applications concerning quantum effects in MOSFETs.

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“…Presently, they have reached atomic scale, which causes large leakage currents due to direct tunneling [1]. This problem can be solved by replacing the SiO 2 or Si-oxynitride with other materials with higher dielectric constants, so-called, high-k materials [2,3].…”

Section: Introductionmentioning

confidence: 99%

Annealing Behavior of La<sub>2</sub>O<sub>3</sub> Thin Film Deposited on Si (001) Substrate Studied by Spherical Aberration Corrected TEM/STEM

Inamoto

Yamasaki

Okunishi

et al. 2009

Trans. Mat. Res. Soc. Japan

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The annealing behavior of an La 2 O 3 thin film deposited on an Si (001) substrate was studied by spherical aberration corrected transmission electron microscopy. The thickness and roughness of the as-deposited and 300/500℃ post-deposition annealing (PDA) films was measured precisely. Composition analysis of the films was performed by electron energy loss spectroscopy. Based on the results, we propose a model for atomic diffusions and reactions during the PDA. We clarify the reason that the 300℃ PDA brings better electric properties than the as-deposition and the 500℃ PDA.

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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Cited by 770 publications

References 10 publications

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation

Quantum effects in the simulation of conventional devices

Annealing Behavior of La<sub>2</sub>O<sub>3</sub> Thin Film Deposited on Si (001) Substrate Studied by Spherical Aberration Corrected TEM/STEM

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