Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

Abstract

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.