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In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the device parameters, such as the inversion charge centroid, threshold voltage, inversion charge, gate capacitance, and drain current. These parameters are modeled for various device dimensions and applied bias. The results are validated against the TCAD simulation results.

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This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage (I-V) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor (n, m) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I-V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I-V characteristics and also to reveal the impact of high-k materials on I-V characteristics.