Quantum oscillations of nonlinear response in electron systems with variable density

Abstract

Articles you may be interested inInsulator-quantum Hall conductor transition in high electron density gated InGaAs/InAlAs quantum wells J. Appl. Phys. 108, 063701 (2010); 10.1063/1.3486081 Molecular beam epitaxy of high mobility In 0.75 Ga 0.25 As for electron spin transport applications Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well Appl. Phys. Lett. 94, 152107 (2009); 10.1063/1.3119664Controlling electric field and electron density in a double-gated GaAs/AlGaAs quantum well Improvement of the electron density in the channel of an AlGaAs/GaAs heterojunction by introducing Si δ doping in the quantum well Quantum oscillations of dissipative resistance are observed in response to electric current applied to a GaAs quantum well with variable two dimensional electron density placed in quantizing magnetic fields. At a fixed magnetic field, the period of the current induced oscillations depends linearly on the electron density. The observed behavior is in accord with a recently proposed model that considers the DC bias-induced spatial re-population of Landau levels as the origin of the resistance oscillations. It indicates the important role of the electron screening in the vicinity of the quantum well, which significantly enhances the nonlinear response. V C 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4790374] 053709-2 Dietrich et al.

Quantum electron lifetime in GaAs quantum wells with three populated subbands

“…These phenomena indicate an important role of the electrostatic re-population of the subbands in wide quantum wells placed in the quantizing magnetic fields. It is realized recently that the re-population could be significantly enhanced in quantum wells grown inside screening superlattices [36][37][38] . These quantum wells were used in the presented research.…”

Anomalous negative magnetoresistance of two-dimensional electrons

“…The transport time τ tr , which is determined by the large angle scattering, shows significantly smaller absolute variations. 39 The 2D electron density stays nearly the same in this regime 40 . Further decrease of the gate voltage depopulates completely the screening layer and 2D electron density starts to follow the gate voltage 39,40 .…”

Oscillating electron mobility in GaAs/Al x Ga 1 − x As double quantum well structure under applied electric field

“…where A 00 =B 00 +C 01 , A 01 =(-k F1 /k F0 )D 01 , A 10 =(-k F0 /k F1 )D 10 and A 11 =B 11 +C 10 in which k Fn =(2mE Fn /ħ 2 ) 1/2 . The intrasubband B nn and intersubband C nm and D nm scattering rate matrix elements can be expressed in terms of screened scattering potentials V eff nm (q nm ) as [17,19] :…”

“…Several attempts have been made to study magneto-oscillations of two dimensional electron gas (2DEG) [1][2][3] associated with quantum Hall effects [4] and also other phenomena involving magnetoresistance [5][6][7][8][9][10].…”