Quantum Oscillations of Transport Coefficients in n‐Type Indium Arsenide

Abstract

Oscillations in the magnetoresistance, Hall coefficient, and thermoelectric power in transverse and longitudinal strong magnetic fields are studied for different polycrystalline samples of n‐InAs at liquid helium temperatures. Some pecularities, which have also been observed previously in n‐InSb, cannot be explained by existing theory and need special theoretical treatment.

The Shubnikov–de Haas Effect in Semiconductors: A Comprehensive Review of Experimental Aspects

“…Its band structure is quite similar to that of InSb with a conductionband minimum at k = 0, well below any subsidiary minima located elsewhere in the Brillouin zone. The influence of spin was found to produce a 0 + maximum in the transverse geometry along with a 0 + maximum in the Hall coefficient (Bresler et al 1966a, Amirkhanov et al 1967. A number of SdH studies were carried out on polycrystalline n-InAs and single-crystal samples with concentrations ranging from 1.2 χ 10 16 to 4.5 χ 10 17 cm -3 .…”

“…n-InSb has been the most extensively studied semiconductor, undoubtedly because of the ease of growing good-quality crystals of various electron concentrations and high mobilities. Much effort was subsequently devoted to observing and understand ing spin splitting in the high-field extrema of the transverse or longitudinal magnetoresistance (Amirkhanov et al 1965, Bresler et al 1965, Amirkhanov and Bashirov 1965a, b, 1967a, Pavlov et al 1965, Antcliffe and Stradling 1966, Bresler et al 1966b, Bliek et al 1974, Raymond et al 1978, Gluzman et al 1979, Jay-Gerin 1979, Staromlynska et al 1983. Since the first observations of the SdH effect in n-InSb (Frederikse and Hosier 1956, Kanai and Sasaki 1956, von Bush et al 1957) about 75 papers have been published that deal with a wide variety of effects and applications.…”