Quantum short-channel compact model for the threshold voltage in double-gate MOSFETs with high-permittivitty gate dielectrics

Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation

“…Among these solutions, MOSFETs designed with Double-Gate (DGFET) configuration are very interesting for the nanometer scale, since they present a very good control of parasitic short channel effects (SCE) [5][6][7], no parasitic doping fluctuation effects due to the intrinsic nature of the film and increased carrier mobility and drain current [8]. Intrinsic films are also characterized by a high probability of ballistic transport in the channel [9][10][11][12][13], which could additionally reinforce the electrical performances of DGFET.…”

Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

“…A thicker gate dielectric leads to a ''fringing-induced barrier lowering" (FIBL) effect in the channel. As explained in [17,20,21], this effect is due to the fringing electric field induced from the gate into the source/drain regions, which leads to an enhanced electric field into the channel. Then, the potential barrier of the channel is lowered and, consequently, short-channel effects are enhanced.…”

Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects

“…Different criteria for the threshold of inversion in the intrinsic body MOSFETs have been proposed [16]. Among them, the constant charge definition for the threshold voltage has been widely accepted for DG MOSFETs [17][18][19][20][21]. Using this definition, V TH may be determined as the gate voltage at which the minimum sheet density of carriers reaches a value, denoted by Q TH , which is adequate for identifying the turn on condition [17].…”

“…2, the parabolic potential is a proper approximation for the body potential at the threshold of inversion. This is a good approximation even for high levels of body doping [18,22,23]. Using the Gauss's law and considering the symmetry of the structure, we can write Here, we have used t si = 6 nm, t ox = 1 nm, and midgap gates (the work function of the gate material is assumed to be the same as that of the intrinsic silicon which is about 4.6 eV).…”