Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

Loussier, X.; Munteanu, Daniéla; Autran, Jean‐Luc

doi:10.1016/j.jnoncrysol.2009.02.011

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…As the MOSFET gate length reaches the nanometer regime, short channel effects (SCEs) become more and more significant, thus, new circuit design technologies and various device concepts are becoming extensively attractive (Alam and Abdullah, 2012;Bahari et al, 2011;Kurniawa et al, 2010;Loussier et al, 2009;Tienda et al, 2008). Multiple-gate structures and silicon on insulator (SOI) are promising structures to overcome SCEs in nanometre-scaled MOSFETs (Gaffar et al, 2011;Ranaka et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)

Hosseini

Fathipour²,

Faez³

2012

Int. J. Phys. Sci.

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In this paper, electrical characteristics of the double gate metal oxide semiconductor field effect transistor (DG MOSFET) and that of gate all around silicon nanowire transistor (GAA SNWT) have been investigated. We have evaluated the variations of the threshold voltage, the subthreshold slope, draininduced barrier lowering, ON and OFF state currents when channel length decreases. Quantum mechanical transport approach based on non-equilibrium Green's function method (NEGF) has been performed in the frame work of effective mass theory with taking into account exchange-correlation effects. Its simulation consists of solutions of the three dimensional Poisson's equation, two dimensional Schrodinger equation on the cross section plane, and also transport equation. We have shown that for lengths smaller than 15 nm, short channel effects dominate. When the dimensions become smaller, interelectronic distance decreases and the interaction between electrons and also exchange correlation effects increase. We have also demonstrated that short channel effects are decreased using the device which has a good control of gate.

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Section: Introductionmentioning

confidence: 99%

Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)

Hosseini

Fathipour²,

Faez³

2012

Int. J. Phys. Sci.

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“…The presence of this layer, which is most of the time voluntarily deposited to improve interface quality, 2,3) modifies the electrical characteristics of a device owing to the large difference in material properties (e.g., band offset, effective mass, and constant dielectric) between the highlayer and the interfacial dielectric. [9][10][11][12] Quantum-mechanical effects, such as tunneling transmission probability, markedly affect the transport of electrons through multi layer gate stacks and thus leakage current must be carefully modeled to predict the performance of the above devices. 13,14) In this context, we present a detailed study of the gate leakage current in MIM capacitors with different high-dielectrics and thicknesses, using and comparing the well-known Wentzel-Kramers-Brillouin (WKB) approximation 15,16) and a full quantum-mechanical approach, namely, the nonequilibrium Green's function (NEGF) formalism.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Gate Tunneling Current in Metal–Insulator–Metal Capacitor with Multi layer High-κ Dielectric Stack Using the Non-equilibrium Green's Function Formalism

Moreau¹,

Munteanu²,

Autran³

2009

Jpn. J. Appl. Phys.

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In this paper, we present a one-dimensional (1D) simulation study of gate leakage current in metal-insulator-metal (MIM) capacitors using the non-equilibrium Green's function (NEGF) formalism. The simulation code has been used to calculate tunneling transmission probability and tunneling current through multi layer gate stacks with various high-permittivity (high-) dielectric materials. Quantum-mechanical (NEGF) results are compared with the results of Wentzell-Kramers-Brillouin (WKB) classical approximation for different equivalent oxide thicknesses (EOTs) in numerous gate stacks such as single-SiO 2 -layer devices or double-layer (SiO 2 + high-) structures. Quantum simulation shows that the conduction band offset between oxides induces wave-function reflections against barrier discontinuities, which significantly affect the transport of electrons and thus gate leakage current, particularly in double-layer high-gate dielectric stacks. The study of various high-dielectrics also shows that gate leakage current strongly depends not only on material properties such as dielectric constant, effective mass, and conduction band offset, but also on interfacial oxide (SiO 2 ) layer thickness.

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A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

Hosseini

Fathipour

Faez

2012

International Journal of Electronics

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Simulation study of circuit performances of independent double-gate (IDG) MOSFETs with high-permittivity gate dielectrics

Cited by 3 publications

References 16 publications

Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)

Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)

Simulation of Gate Tunneling Current in Metal–Insulator–Metal Capacitor with Multi layer High-κ Dielectric Stack Using the Non-equilibrium Green's Function Formalism

A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

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