Quantum Size Effects And Transport Phenomena In Semiconductor IV-VI—Based 2D-Structures

Abstract

The present status of our studies of thickness oscillations of the transport properties in IV-VI quantum wells is reviewed. The results of those studies provide the first experimental evidence for the existence of oscillations in the thickness dependences of the transport properties of IV-VI quantum wells caused by size quantization of the electron (hole) energy spectrum.

Weyl Node-Participated Magnetoresistance and Nonreciprocal Transport in Two-Dimensional Tellurene Nanostructures

“…Below 190 K (freeze-out region), a notable uprise in resistance occurs as temperature decreases, which can be attributed to the freeze-out effect, consequently resulting in distinct insulating behavior . Notably, this transition temperature is considerably higher than previously reported values, which is possibly attributed to the amplification of the activation energy induced by the high surface area-to-volume ratio of the 2D nanoscale of the Te flake (size effect) …”

“…24 Notably, this transition temperature is considerably higher than previously reported values, 25 which is possibly attributed to the amplification of the activation energy induced by the high surface area-to-volume ratio of the 2D nanoscale of the Te flake (size effect). 26 Since the Te used is a doped semiconductor, the Hall resistance is measured to confirm its carrier type and density, as summarized in Figure S3a. The negative curve slope indicates that the majority carriers in Te flake are holes, and the carrier density can be calculated as 11.9 × 10 18 cm −3 at 2 K. More details are demonstrated in Supporting Information Section S3.…”