Quantum Transport of Sub-10 nm Monolayer WGe₂N₄ Transistors

Abstract

Two-dimensional MA2Z4, as another system of a two-dimensional material family, can obtain different materials and considerable properties by replacing the elements M, A, and Z. At present, the physical properties and optical response of MA2Z4 materials have been studied, but there is still a lack of research on the application of MA2Z4 as a transistor channel material to investigate its transistor performance. Here, we employ WGe2N4 as a representative to systematically study the bounce-to-transport properties and gate control capability of ML WGe2N4 field effect transistors below 10 nm via ab initio quantum transport calculations. Until the channel length is down to 3.0 nm, the optimized n/p-type doped WGe2N4 metal–oxide–semiconductor field-effect transistors with proper concentrations and underlap structures can satisfy the high-performance requirements of International Technology Roadmap for Semiconductors of 2013 version, by considering the on-current, subthreshold swing, intrinsic delay time, and dynamic power indicator. Therefore, we can estimate that the monolayer WGe2N4 is a competitive alternative for transistor channel materials in the post-silicon era.

Large and anisotropic carrier mobility in monolayers of the MA2Z4 series (M = Cr, Mo, W; A = Si, Ge; and Z = N, P)

“…27,29 This has generated significant interest for exploring the physical properties of other members of this series of MA 2 Z 4 compounds. [30][31][32] Motivated by this, here we investigate the strain tunability of electronic properties and acoustic phonon limited mobility in different monolayers of the MA 2 Z 4 family. Specifically, we focus on synthetic monolayers in which M is a transition metal such as Mo or W or Cr, A is Si or Ge, and Z is N or P. Our first-principles calculations predict that among the twelve monolayers studied, only two are metallic (CrGe 2 N 4 and CrGe 2 P 4 ), and the rest of them are semiconducting.…”

Electronic and Excitonic Properties of MSi2Z4 Monolayers

“…[31][32][33] Large on/off ratios were obtained in simulations of 1L MA 2 Z 4 transistors. [34][35][36][37] Very recently, MoSi 2 N 4 -based structures were experimentally shown to exhibit superconducting behavior. [38] This makes 1L MA 2 Z 4 promising candidates for device applications and stimulates further theoretical and experimental studies.…”

Prediction of Semiconducting 2D Nanofilms of Janus WSi2P2As2 for Applications in Sub-5 nm Field-Effect Transistors

“…Therefore, it is necessary to seek new nano-semiconductors supplementing silicon to mitigate short-channel effects. Compared with the three-dimensional semiconductors, two-dimensional (2D) semiconductors present atomic-thickness structures and dangling-bond-free surfaces, guaranteeing their superior electrostatic gate ability and avoiding the unwanted scattering. − Hence, the 2D nanoscale semiconductors are promising candidates to make the short-channel FETs possible. Up to now, plenty of sub-10 nm FETs based on 2D semiconductors have been reported in experiments or predicted in theory, such as MoS 2 -, black phosphorene-, InSe-, arsenene-, , antimonene-, , tellurene-, , and BiN-based FETs .…”