Quantum transport, quantum effects and circuit functionality of nanostructured electronic circuits

Mathis, Wolfgang; Felgenhauer, F.; Fabel, S.

doi:10.1002/cta.288

Cited by 7 publications

(7 citation statements)

References 44 publications

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“…where J0 is the Josephson oscillating frequency according to (4). The resonant circuit consisting of L 1 , C 1 is considered to be the signal circuit, and the resonant circuit built by L 2 , C 2 represents the idler circuit.…”

Section: Langevin Theory Of the Dissipative Josephson Parametric Amplmentioning

confidence: 99%

Quantum theory of the dissipative Josephson parametric amplifier

Kaiser

Haider

Russer

et al. 2017

Circuit Theory & Apps

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Summary Recent research in superconducting quantum circuits operating close to the quantum limit results in the need of a quantum mechanical treatment of losses. Of special interest is the dynamic behaviour of an open quantum system. As an example, a negative‐resistance Josephson parametric amplifier is treated. The DC bias voltage is chosen such that a strong interaction between the Josephson junction and the two resonant circuits, the signal and the idler circuit, is achieved. Power exchange occurs between the two considered resonator modes and also between the resonator modes and the DC power supply. Losses in the resonators are modeled by the quantum Langevin method, which describes the losses by coupling the resonators to a heat bath representing a photon gas in thermal equilibrium. The derived dynamic behaviour does not provide signal energy saturation, like classically expected for parametric amplifiers. Introducing a phenomenological multi‐photon coupling approach, saturation of the amplified signal is ensured. The time evolution of the signal and noise energy is calculated and numerically evaluated for a specific example in cases of both, the quantum Langevin method with and without the phenomenological multi‐photon coupling approach. Copyright © 2017 John Wiley & Sons, Ltd.

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Section: Langevin Theory Of the Dissipative Josephson Parametric Amplmentioning

confidence: 99%

Quantum theory of the dissipative Josephson parametric amplifier

Kaiser

Haider

Russer

et al. 2017

Circuit Theory & Apps

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“…The whole structure is discretized in many square elements with a uniform grid spacing of a , along both x and z directions. On the basis of the ballistic transport model with NEGF method (a detailed introduction to it can be found in [7] [2]), the BPs are implemented in the device along the transport direction ( x ‐direction) for modeling the scattering effects.…”

Section: Theorymentioning

confidence: 99%

“…Σ S and Σ D are the so‐called self‐energy matrices which describe the coupling to the reservoir at the left end and the right end of the device . Ignoring all scattering processes in first approximation, the retarded Green's function relevant to the 1D ballistic transport is given with

G (E_{l}) = {[E_{l} I - H_{C} - \underset{\sum}{\underset{︸}{(Σ_{S} + Σ_{D})}}]}^{- 1} .

…”

Section: Theorymentioning

confidence: 99%

“…The research of these quantum mechanical effects can be divided into two areas. On the one hand, people treat the additional quantum mechanical effects as parasitic effects and investigate their impact on the classical circuit functionalities [1] [2] [3]. In these works, people are interested in the functionality of quasi‐classical devices and classical circuits under the influence of these “disturbing” quantum effects.…”

Section: Introductionmentioning

confidence: 99%

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The influence of Büttiker probe scattering to the port behavior of nanoscale metal–oxide–semiconductor devices

Xiong

Wang

Mathis

2012

Circuit Theory & Apps

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SUMMARYThis paper presents a discussion of the impact of Büttiker probe scattering on the port behavior of nanoscaled metal-oxide-semiconductor devices. The simulation of the carrier transport property is based on the nonequilibrium Green's function formalisms, and scattering effects are implemented in the model through Büttiker probes. For reducing the computational burden, a simplified model for modeling the scattering effects with only one Büttiker probe is proposed and gives reasonable results for studying the port behaviors of nanoscaled metal-oxide-semiconductor devices.

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“…where the energy E n ¼ E þ iZ is shifted in the complex plain by Z; ðZ ! 0Þ to ensure the invertibility of the coefficient matrix in Equation (12). Note that the overall Green's function G is a matrix of infinite size, due to coupling of semi-infinite contacts.…”

Section: Numerical Modellingmentioning

confidence: 99%

Analysis of parasitic quantum effects in classical CMOS circuits

Felgenhauer

Begoin

Mathis

2005

Int J Numerical Modelling

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SUMMARYIn the mesoscopic regime, the MOS device performance is affected by gate-induced quantization effects leading to a loss of transconductance and threshold voltage shift and gate leakage tunnelling currents degrading the overall device performance. We discuss the expected impact of quantum effects in highly down scaled CMOS circuits. Based on 1-d numerical simulations for transport in mesoscopic systems, we set up Spice circuit models. The Spice models rebuild the influence of quantum effects; and the functionality of classical circuit concepts can be 'tested' in their robustness against these effects. A few circuit examples will be given.

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Quantum transport, quantum effects and circuit functionality of nanostructured electronic circuits

Cited by 7 publications

References 44 publications

Quantum theory of the dissipative Josephson parametric amplifier

Quantum theory of the dissipative Josephson parametric amplifier

The influence of Büttiker probe scattering to the port behavior of nanoscale metal–oxide–semiconductor devices

Analysis of parasitic quantum effects in classical CMOS circuits

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