Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

Andreev, V. M.; Kazantsev, A. B.; Khvostikov, V. P.; Paleeva, E.V.; Rumyantsev, V.D.; Sorokina, S. V.

doi:10.1016/0254-0584(96)80090-3

Cited by 10 publications

(1 citation statement)

References 1 publication

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“…The lowering the growth temperature for Al-Ga-As system provides the minimal growth rate values of 1-10 Å/s, and they are comparable with MBE and MOCVD growth values (Alferov et al, 1986). At the early stages of the process two-dimensional layer growth occurs, which ensures structure planarity and makes it possible to obtain multilayer quantum well (QW) structures (Andreev et al, 1996).…”

Section: Low-temperature Lpe Growthmentioning

confidence: 99%

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Milanova¹,

Vitanov²

2011

Solar Cells - New Aspects and Solutions

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Section: Low-temperature Lpe Growthmentioning

confidence: 99%

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Milanova¹,

Vitanov²

2011

Solar Cells - New Aspects and Solutions

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A high‐efficiency LPE GaAs solar cell at concentrations ranging from 2000 to 4000 suns

Ortiz

Algora

2003

Progress in Photovoltaics

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III–V solar cells for terrestrial concentration applications are currently becoming of greater and greater interest. From our experience, concentrations higher than 1000 suns are required with these cells to reduce PV electricity cost to such an extent that this alternative could become cost competitive.In this paper, a single‐junction p/n GaAs solar cell, with efficiencies of 23ċ8 and 22ċ5% at concentration ratios of 2700 and 3600 suns respectively, is presented. This GaAs solar cell is well suited for use with non‐imaging optical concentrators, which possess a large aperture angle. Low‐temperature liquid phase epitaxy (LTLPE) has been the growing technique for the semiconductor structure as an attempt to use a simplified, cheap and clean technique, within a renewable energy perspective.The GaAs solar cell presented is compared with the highest efficiency tandem solar cells at concentration levels exceeding 1000 suns. The GaAs solar cell performance maintains high efficiencies up to 4000 suns, while tandem cells seem to drop very quickly after reaching their maximum. Therefore, single‐junction GaAs solar cells are a good candidate for operating at very high concentrations, and LPE is able to supply these high‐quality solar cells to work within terrestrial concentration systems, the main objective of which is the reduction of PV electricity costs. Copyright © 2003 John Wiley & Sons, Ltd.

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GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy

Milanova

Arnaudov

Alonso‐Álvarez

et al. 2019

J Mater Sci: Mater Electron

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Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

Cited by 10 publications

References 1 publication

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

A high‐efficiency LPE GaAs solar cell at concentrations ranging from 2000 to 4000 suns

GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy

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