Quantum-Well Design for Monolithic Optical Devices With Gain and Saturable Absorber Sections

Nikolaev, V. V.; Avrutin, E.A.

doi:10.1109/lpt.2003.819399

Cited by 7 publications

(1 citation statement)

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“…A more significant improvement may be achieved by using more complex structures than a single abrupt QW; the application of our theory to the design of such structures will be reported elsewhere [23].…”

Section: Dependence Of the Escape Time On Qw Parametersmentioning

confidence: 96%

Photocarrier escape time in quantum-well light-absorbing devices: effects of electric field and well parameters

Nikolaev

Avrutin

2003

IEEE J. Quantum Electron.

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Article:Nikolaev, V V and Avrutin, E A orcid.org/0000-0001- 5488-3222 (2003) ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. Abstract-We analyze the dependence of the carrier escape time from a single-quantum-well optoelectronic device on the aplied electric field and well width and depth. For this purpose, a new simple and computationally efficient theory is developed. This theory is accurate in the case of electrons, and the assessment of the applicability for holes is given. Semi-analytical expressions for the escape times are derived. Calculations are compared to experimental results and previous numerical simulations. Significant correlations between the position of quantum-well energy levels and the value of the escape time are found. The main escape mechanism at room temperature is established to be thermally assisted tunneling/emission through near-barrier-edge states. The formation of a new eigenstate in the near-barrier-edge energy region is found to reduce the electron escape time significantly, which can be used for practical device optimization.Index Terms-Optoelectronic devices, quantum wells (QWs), saturable absorbers.

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Section: Dependence Of the Escape Time On Qw Parametersmentioning

confidence: 96%