Quantum wires in InGaAs/InP fabricated by holographic photolithography

Miller, B. I.; Shahar, A.; Koren, U.; Corvini, P. J.

doi:10.1063/1.101222

Cited by 56 publications

(6 citation statements)

References 14 publications

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“…In order to fabricate structures showing quantum effects various techniques such as wet or dry etching, ion beam implantation or milling, lithography, self-assembling or regrowth on processed samples have been investigated. [1][2][3][4][5][6] In the present article we describe the capability of direct nanoscale etching by focused ion beam ͑FIB͒ as one of the possible and useful methods for forming submicron structures like quantum dots ͑QDs͒ and quantum wires ͑QWs͒. The main attraction of FIB is that it may eliminate the dependence on the conventional mask/resist processing, allow the controllability of position, size, and density of patterns, and is applicable to any kind of material.…”

Section: Introductionmentioning

confidence: 97%

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Lachab

Nozaki

Wang

et al. 2000

Journal of Applied Physics

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In the present article we report on the selective fabrication of InGaN nanostructures on Si coated GaN/sapphire substrates using the focused ion beam (FIB)/metalorganic chemical vapor deposition (MOCVD) process. InGaN quantum dots and InGaN quantum wires have been fabricated. The process combines window openings in the Si mask layer with localized highly energetic Ga+ FIB irradiation, subsequent photo-assisted wet chemical etching in a solution of KOH:H2O2 (3:1 by mole) and finally the growth of InGaN/GaN nanostructures using MOCVD. This technique proved to be efficient in realizing practically damage-free etching, hence preventing the deterioration of the nanostructure’s crystal quality. The density, size, and positions of the nanostructures could be well designed and controlled using the above process. Structural characterization by transmission electron microscopy, atomic force microscopy observations, and optical investigation by cathodoluminescence were carried out.

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Section: Introductionmentioning

confidence: 97%

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Lachab

Nozaki

Wang

et al. 2000

Journal of Applied Physics

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show abstract

“…[65][66][67][68][69] The lowdimensional hetero-structures based on various materials are widely investigated because of the enhancement of carrier mobility. 70 These properties make such structures suitable for applications in QW lasers, 71 hetero-junction FETs, 72 73 high-speed digital networks, 74 high-frequency microwave circuits, 75 optical modulators, 76 optical switching systems, 77 and other devices.…”

Section: Introductionmentioning

confidence: 99%

2D Einstein Relation in Quantum Wells Under Strong Electric Field

Mitra¹,

Chatterjee²,

Ghatak³

2015

j comput theor nanosci

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In this paper we study the influence of strong electric field on the two dimensional Einstein Relation (2D ER) in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k.p formalism by formulating a new electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg 1−x Cd x Te and In 1−x Ga x As 1−y P y lattice matched to InP as examples that the ER decreases with increasing film thickness, electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The ER increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. We have suggested an experimental method of determining 2D ER for materials having arbitrary dispersion laws.

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“…20 In QWs the restriction of the motion of the carriers in the direction normal to the film (say, the z direction) may be viewed as carrier confinement in an infinitely deep one dimensional (1D) rectangular potential well, leading to quantization [known as quantum size effect (QSE)] of the wave vector of the carrier along the direction of the potential well, allowing 2D carrier transport parallel to the surface of the film representing new physical features not exhibited in bulk semiconductors. [65][66][67][68][69] The lowdimensional hetero-structures based on various materials are widely investigated because of the enhancement of carrier mobility. 70 These properties make such structures suitable for applications in QW lasers, 71 hetero-junction FETs, 72 73 high-speed digital networks, 74 high-frequency microwave circuits, 75 optical modulators, 76 optical switching systems, 77 and other devices.…”

Section: Introductionmentioning

confidence: 99%

Diffusivity-Mobility Ratio in Heavily Doped Quantum Wells Under Intense Light Waves

Adhikari¹,

Karmakar²,

Ghatak³

2014

j comput theor nanosci

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In this paper we investigate the influence of strong light waves on the two dimensional diffusivity mobility ratio in heavily doped quantum wells of III-V, ternary and quaternary semiconductors within the framework of k.p formalism by formulating a new electron energy spectrum. It appears taking heavily doped quantum wells of InSb, InAs, Hg 1−x Cd x Te and In 1−x Ga x As 1−y P y lattice matched to InP as examples that the said ratio decreases with increasing film thickness, intensity, wave length and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The ratio increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. We have suggested an experimental method of determining heavily doped two dimensional diffusivity mobility ratios for materials having arbitrary dispersion laws.

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Quantum wires in InGaAs/InP fabricated by holographic photolithography

Cited by 56 publications

References 14 publications

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

2D Einstein Relation in Quantum Wells Under Strong Electric Field

Diffusivity-Mobility Ratio in Heavily Doped Quantum Wells Under Intense Light Waves

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