Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Lachab, M.; Nozaki, M; Wang, J.; Ishikawa, Yasuhiro; Fareed, Q.; Wang, T.; Nishikawa, Takehiro; Nishino, Katsushi; Sakai, Shiro

doi:10.1063/1.372023

Cited by 16 publications

(7 citation statements)

References 17 publications

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“…Etching rate of silicon per emitter calculated from the volume of the cone-shaped dimple was 24 μm 3 /sec for the average ion current per emitter of 42 nA with ion-acceleration voltage of 5.1 kV. This value was 1.5 times larger than the reported etching rate of a conventional focused Ga + ion beam with ion-acceleration voltage of 30 kV [8]. 4 ] contains fluorine based ion, chemical etching is expected, and it could lead to higher etching rate of the silicon.…”

Section: Reactive Ion Etchingmentioning

confidence: 95%

Concurrent reactive ion etching employing micromachined ionic liquid ion source array

Yoshida

Hara

Oguchi

et al. 2014

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper describes concurrent reactive ion etching using micro ionic liquid ion source (ILIS) array. The system consists of micro needle emitters and a reservoir for the ionic liquid (IL) of 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]-[BF 4 ]). The ion beam etching of a (100) silicon substrate using the fabricated ILIS array was demonstrated. As a result of mass spectroscopy during the etching, the peaks of SiF + , SiF 2 + , and SiF 3 + were observed. The chemical reaction between the silicon and fluorine based ions from the IL was confirmed. Also, etching rate of the silicon using the ILIS array applying 5.1 kV ion-acceleration voltage was calculated from the etched dimple on the substrate and was 1.5 times larger than that of a conventional focused Ga + ion beam applying 30 kV ion-acceleration voltage.

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Section: Reactive Ion Etchingmentioning

confidence: 95%

Concurrent reactive ion etching employing micromachined ionic liquid ion source array

Yoshida

Hara

Oguchi

et al. 2014

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…Due to these opposite characteristics, the stabilization of (In,Ga)N solid solutions, which, in principle, may allow to access an enormous range of electro-optical/thermal properties and get into a wide gamma of technologies, results to be complex, limited at the nanoscale − and far from applications yet. Consequently, (In,Ga)N production still represents one of the biggest challenges for the scientific community working on this class of nitrides.…”

Section: Introductionmentioning

confidence: 99%

High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus

et al. 2023

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We present a new method to synthesize bulk indium nitride by means of a simple solid-state chemical reaction carried out under hydrostatic high-pressure/high-temperature conditions in a multi-anvil apparatus, not involving gases or solvents during the process. The reaction occurs between the binary oxide In 2 O 3 and the highly reactive Li 3 N as the nitrogen source, in the powder form. The formation of the hexagonal phase of InN, occurring at 350 °C and P ≥ 3 GPa, was successfully confirmed by powder X-ray diffraction, with the presence of Li 2 O as a unique byproduct. A simple washing process in weak acidic solution followed by centrifugation allowed us to obtain pure InN polycrystalline powders as a precipitate. With an analogous procedure, it was possible to obtain pure bulk GaN, from Ga 2 O 3 and Li 3 N at T ≥ 600 °C and P ≥ 2.5 GPa. These results point out, particularly for InN, a clean, and innovative way to produce significant quantities of one of the most promising nitrides in the field of electronics and energy technologies.

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“…To date, most of the III‐nitride nanostructures have been fabricated by the self‐assembled Stranski–Krastanow (SK) growth , which does not enforce control over the structures' position or dimension, demotivating their practical use on the device level. In recent years, selective area epitaxy (SAE) using metal‐organic chemical vapor deposition (MOCVD) has been proven to be feasible for the fabrication of a variety of site‐controlled III‐nitride nanostructures, such as nanowires and nanodots . During SAE, the morphology of the three‐dimensional epi‐structure grown within the mask opening evolves according to the growth dynamics , source supply mechanisms , and growth rate anisotropy .…”

Section: Introductionmentioning

confidence: 99%

Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy

Lee

Aagesen

Thornton

et al. 2014

Physica Status Solidi (a)

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We investigated the origin of broad luminescence observed from an array of site-controlled InGaN nanodots grown by selective area epitaxy (SAE). Epitaxially grown site-controlled nanodots with lateral dimensions <50 nm and an array density of 10 10 cm À2 have been studied. During the nanoscale SAE, incorporation of adatoms from the SiO 2 mask has greater relative importance, resulting in a non-uniform growth profile. This non-uniform growth profile leads to significant broadening of the InGaN nano-heterostructure luminescence. Later in the SAE process, an orientation-dependent growth rate coalesces various crystal planes and transforms these nanostructures into a more uniform array.1 Introduction III-nitride nanostructures possess unique properties, such as a wide tuning range for the emission wavelength [1, 2] large exciton binding energy (!26 meV in bulk) [3,4], and robust spin coherence [5], making them particularly attractive for applications in nanophotonics [6,7], spintronics [5,8], and quantum information processing [7,9]. In many of these applications, it is critical to be able to control the dimension and location of the nanostructures. For example, exciton-cavity coupling requires the precise placement of a single quantum dot heterostructure at the anti-node of an optical cavity [10]. To date, most of the III-nitride nanostructures have been fabricated by the self-assembled Stranski-Krastanow (SK) growth [11], which does not enforce control over the structures' position or dimension, demotivating their practical use on the device level. In recent years, selective area epitaxy (SAE) using metal-organic chemical vapor deposition (MOCVD) has been proven to be feasible for the fabrication of a variety of site-controlled III-nitride nanostructures, such as nanowires [12] and nanodots [2,[13][14][15][16][17][18]. During SAE, the morphology of the three-dimensional epistructure grown within the mask opening evolves according to the growth dynamics [12,19], source supply mechanisms [20,21], and growth rate anisotropy [22,23]. Because optical properties of III-nitride heterostructures strongly

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Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Cited by 16 publications

References 17 publications

Concurrent reactive ion etching employing micromachined ionic liquid ion source array

Concurrent reactive ion etching employing micromachined ionic liquid ion source array

High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus

Origin of broad luminescence from site‐controlled InGaN nanodots fabricated by selective‐area epitaxy

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