The unique puckered pentagonal structure of the layered
semiconductor
material palladium phosphorus selenide (PdPSe) has gathered attention,
but its electronic performance has not been thoroughly investigated.
In this study, PdPSe is synthesized via chemical vapor transport,
and its thickness-dependent electrical properties are examined from
1.4 to 309 nm via the field-effect transistor (FET) measurement. The
material exhibits n-type semiconducting behavior, with relatively
high mobility observed at a specific thickness range, reaching up
to 4.9 cm2 V–1 s–1 with
a maximum on/off ratio of 2.86 × 108 at a V
ds of 1 V. The transport mechanism is analyzed
by calculating the Schottky barrier height (SBH) using a thermionic
emission model. Temperature-dependent analysis revealed that the device
has a minuscule SBH and the PdPSe FET device follows the Fowler–Nordheim
tunneling model. Through drain-voltage-dependent FET characteristic
analysis, an improvement in carrier mobility up to 33 cm2 V–1 s–1 is observed at a high
drain voltage of 10 V. These findings provide fundamental insights
into the performance of PdPSe FETs and their potential use in next-generation
electronic applications based on two-dimensional (2D) materials.