Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Tanaka, Akihiro; Oritsuki, Y.; Kikuchihara, Hideyuki; Miyake, M.; Mattausch, H. J.; Miura-Mattausch, Mitiko; Liu, Y; Green, K

doi:10.1109/ted.2011.2132135

Cited by 37 publications

(9 citation statements)

References 16 publications

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“…is the high lateral-field drift resistance obtained with the assumption that all the voltage is dropped across the drift region. As reported in [5], the current in drift region may increase beyond saturation.…”

Section: Formulationsmentioning

confidence: 63%

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An Explicit Compact Model for High-Voltage LDMOS

Zhou¹,

Zhou²,

Bénistant³

2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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Section: Formulationsmentioning

confidence: 63%

“…One approach is to construct a sub-circuit so that its terminal behaviors match the ones of a LDMOS [1]. Another approach is to introduce an internal node between the channel and drift region (K-point) [2][3][4][5]. In both cases, iterations are usually required and efforts have to be made to ensure convergence and improve efficiency.…”

Section: Introductionmentioning

confidence: 99%

An Explicit Compact Model for High-Voltage LDMOS

Zhou¹,

Zhou²,

Bénistant³

2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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“…5(a). This increase of current density can be modeled as the increase of the effective carrier density, as is treated in [2]. In HiSIM_HV, the carrier density is set equal to the impurity concentration in the drift region, in the first place.…”

Section: Discussionmentioning

confidence: 99%

“…We have so far developed HiSIM_HV [1,2,3], a compact model for high-voltage MOSFETs, which is based on surface potential descripions, valid both for LDMOS and HV-MOSFET. The model is built on top of HiSIM2, a compact model for bulk-, planar MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka

Fukushima

Tanaka

et al. 2013

IEICE Trans. Electron.

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A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared with planar HV-MOSFET. As for planar HV-MOSFETs, regardless of DDMOS or LDMOS, HiSIM_HV has begun to serve design community as a world recognized model. In this work, the benefit of HiSIM_HV would be extended to another class of HV device, i.e., trench-gate type HV-MOSFET, while the framework of the HiSIM_HV model formulation is kept intact as much as possible. The modified code successfully can play back TCAD-generated measurement data.

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“…where W and XOV are the width and the depth extension of the current flow under the overlap region, respectively, while Ldrift is the length of the resistive drift region and μdrift is the effective mobility of the drain resistive part, including the velocity saturation effect [25], [26]. The impurity-concentration difference between the channel NA and the drain drift region NDD as well as the drift length Ldrift determine the potential Vdp.…”

Section: Inclusion Of Drain Resistance and Depletion Effectsmentioning

confidence: 99%

Compact Modeling of Multi-Gate MOSFETs for High-Power Applications

Herrera

Hirano

Miura-Mattausch

et al. 2020

IEEE J. Electron Devices Soc.

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A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the shortchannel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the drain-resistance effect, which is consistently modeled by considering the whole potential distribution along the device. The overlap length is an important device parameter, which influences on the device characteristics for high-voltage MOSFETs in general. Modeling of the related effects is realized self-consistently for the reported compact high-voltage multi-gate MOSFET model, based on the applied complete potentialdistribution description. In particular, the modeling requirements for capturing the specific features of the capacitance response are explored in detail. It is further demonstrated that the developed model is applicable even for limiting the device-size requirements during the development of a multi-gate MOSFET generation.

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Quasi-2-Dimensional Compact Resistor Model for the Drift Region in High-Voltage LDMOS Devices

Cited by 37 publications

References 16 publications

An Explicit Compact Model for High-Voltage LDMOS

An Explicit Compact Model for High-Voltage LDMOS

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Compact Modeling of Multi-Gate MOSFETs for High-Power Applications

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