Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs

Samoju, Visweswara Rao; Dubey, Sarvesh; Tiwari, Pramod Kumar

doi:10.1007/s10825-015-0690-4

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

2020

Publication Types

Select...

Article4

Book1

Relationship

Self Cite1

Independent4

Authors

Journals

Cited by 10 publications

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Threshold voltage modeling for dual‐metal quadruple‐gate (DMQG) MOSFETs

Samoju

Tiwari

2015

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

Summary In this paper, a three‐dimensional (3D) model of threshold voltage is presented for dual‐metal quadruple‐gate metal‐oxide‐semiconductor field effect transistors. The 3D channel potential is obtained by solving 3D Laplace's equation using an isomorphic polynomial function. Threshold voltage is defined as the gate voltage, at which the integrated charge (Qinv) at the ‘virtual‐cathode’ reaches to a critical charge Qth. The potential distribution and the threshold voltage are studied with varying the device parameters like gate metal work functions, channel cross‐section, oxide thickness, and gate length ratio. Further, the drain‐induced barrier lowering has also been analyzed for different gate length ratios. The model results are compared with the numerical simulation results obtained from 3D ATLAS device simulation results. Copyright © 2015 John Wiley & Sons, Ltd.

show abstract