Quasi-analytical study of offset voltage due to piezoresistive effect in vertical Hall devices by mapping techniques

Sunier, R.; Taschini, S.; Brand, Oliver; Vancura, T.; Baltes, H.

doi:10.1109/sensor.2003.1217082

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…With the above discussion we can say that for large Hall tubs this drift will get very small and for small Hall tubs it is caused by the isolating boundary at the sidewalls and bottom of the tub but not by the top surface. This was already stated in [41] based on the same theory using affine and conformal transformations. It was also experimentally observed that the offset of vertical Hall devices is more stable than the offset of conventional horizontal Hall plates [42].…”

Section: The Affine Transformationmentioning

confidence: 54%

An Analytical Theory of Piezoresistive Effects in Hall Plates with Large Contacts

Ausserlechner

2018

Advances in Condensed Matter Physics

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Four-terminal transducers can be used to measure the magnetic field via the Hall effect or the mechanical stress via the piezoresistance effect. Both effects are described by an anisotropic conductivity tensor with small offdiagonal elements. This has led other authors to the conclusion that there is some kind of analogy. In both cases the output voltage depends on the geometry of the device and the size of the contacts. For Hall plates this influence is accounted for by the Hall-geometry factor. The alleged analogy proposes that the Hall-geometry factor also applies to four-terminal stress transducers. This paper shows that the analogy holds only for a limited class of devices. Moreover, it is shown that devices of different geometries may have identical magnetic field sensitivity but different mechanical stress sensitivities. Thus, shape optimization makes sense for mechanical stress sensors. In extreme cases the output voltages of vertical Hall-effect devices may have notable magnetic field sensitivity but zero mechanical stress sensitivity. As byproduct, exact analytical formulae for the equivalent resistor circuit of rectangular and circular devices with two perpendicular mirror symmetries are given. They allow for an accurate description of how mechanical stress and deformation affect the output offset voltage and the magnetic sensitivity of Hall-effect devices.

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Section: The Affine Transformationmentioning

confidence: 54%