2016
DOI: 10.1116/1.4967236
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Quasi-atomic layer etching of silicon nitride

Abstract: Atomic layer etching (ALE) is a promising technique that can solve the challenges associated with continuous or pulsed plasma processes—trade-offs between selectivity, profile, and aspect ratio dependent etching. Compared to silicon, oxide, and other materials, atomic layer etching of silicon nitride has not been extensively reported. In this paper, the authors demonstrate the self-limited etching of silicon nitride in a commercial plasma etch chamber. The process discussed in this paper consists of two sequen… Show more

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Cited by 68 publications
(49 citation statements)
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“…In order to confirm ALE, we performed a synergy test, 4,24 with the initial ALE parameters shown in Fig. 1.…”
mentioning
confidence: 99%
“…In order to confirm ALE, we performed a synergy test, 4,24 with the initial ALE parameters shown in Fig. 1.…”
mentioning
confidence: 99%
“…Sub‐surface modification of films such as Si 3 N 4 and indium‐doped tin oxide (ITO) by low atomic weight ions such as H + has been discussed in literature . This modification typically occurs in the absence of pronounced physical sputtering and drastically affects subsequent etch behavior of the film by chemical or physical processes.…”
Section: Resultsmentioning
confidence: 99%
“…Overall, ALE processes offer a significantly higher degree of tunability over traditional continuous‐wave (CW) plasma etching, due to the fact that parameters such as gas flows, pressure, and bias power can be adjusted on a step‐specific basis rather than as a global setting for the length of the process. ALE has been studied for a variety of blanket films ranging from semiconductors to dielectrics to metals, however, the number of papers in the literature that have discussed its applications to patterned profiles is significantly fewer …”
Section: Introductionmentioning
confidence: 99%
“…In one recent study, Sherpa and co-workers have developed a novel all-dry process solution for the precision etching of silicon nitride. 6 The new frontier of semiconductor device fabrication will rely on collaboration between the computational and experimental communities to facilitate our understanding of the fundamental material properties and interactions at the atomic/near-atomic scale. This approach will enable the formation of ever-decreasing device dimensions with high fidelity and electrical reliability.…”
Section: Figure 4 Schematic Representation Showing the Difference Bementioning
confidence: 99%