Quasi Crystal Lindhard–Scharff–Schiott Theory and Database for Ion Implantation Profiles in Si_1-xGe_x Substrate Based on the Theory

Abstract

We propose an analytical model for ion implantation profiles in a Si 1Àx Ge x substrate with various content ratios x. The moments associated with the peak region were evaluated using the extended Lindhard-Scharff-Schiott (LSS) theory. The channeling length was related to the maximum range associated with electron stopping power only. We also express the shape of the channeling tail and the channeling dose empirically but with a universal form. We showed that the theory reproduces the experimental data well. Since the theory simultaneously gives information on the lateral distribution, we established a database of B, P, and As ion implantation profiles including their lateral distribution profiles in Si 1Àx Ge x substrates.

Monte Carlo Simulation for Ion Implantation Profiles, Amorphous Layer Thickness Formed by the Ion Implantation, and Database Based on Pearson Function

“…We propose virtually setting the substrate in a negative plane (infinite plane) and tracing ions that are backscattered at the surface or that have escaped from the bulk to the surface, as shown in Fig. 12 [Suzuki (2010b)]. By extracting the moments from the results, we reproduced the MC results more accurately than in the case of the standard MC simulation moments, as shown in Figs.…”