Quasi-Fermi-Level Splitting of 
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-Poor and 
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-Rich 
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Lomuscio, Alberto; Rödel, T. C.; Schwarz, Torsten; Gault, Baptiste; Melchiorre, Michele; Raabe, Dierk; Siebentritt, Susanne

doi:10.1103/physrevapplied.11.054052

Cited by 32 publications

(46 citation statements)

References 27 publications

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“…The band edge emission will be discussed using the data of the sample with Cu/In ratio of 1.8 as it shows the highest intensity and the best-resolved emissions. This suggests an improvement in the crystalline quality of the stoichiometric chalcopyrite phase when films are grown under Cu excess, as already found in our previous work [15]. In Fig.…”

Section: A Band Edge Emissionssupporting

confidence: 86%

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Phonon coupling and shallow defects in CuInS2

et al. 2020

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Cu(In, Ga)S 2 is an emerging material for solar cells, reaching already efficiencies above 15%. For any solar cell material, it is essential to understand the recombination processes and doping behavior of its defects. Therefore, in this work, we present a detailed photoluminescence and admittance investigation of polycrystalline CuInS 2 thin films to study the shallow intrinsic defects. We find evidence for two acceptors, 105 and 145 meV from the valence band, their predominance depending on the Cu excess, plus one donor, 30 meV from the conduction band. The high crystalline and electronic quality of our samples allows the detection of low intensity luminescence peaks. Based on these emissions we can analyze the phonon coupling of the observed defects and show that an emission previously attributed to a second donor is in fact a phonon replica of the first donor-acceptor transition.

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Section: A Band Edge Emissionssupporting

confidence: 86%

“…Recently, we showed that a deep defect in CuInS 2 with a luminescence around 0.8 eV is a major recombination center. We could demonstrate that the concentration of this defect is reduced with higher deposition temperature and higher Cu content [15,16].…”

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confidence: 80%

Phonon coupling and shallow defects in CuInS2

et al. 2020

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“…However, it did not translate into an increase in the device V oc due to interface losses. 5 Recently, we found that the improvement in QFLS for Cu-rich absorbers was mainly due to higher doping (D.A. et al, unpublished data).…”

Section: Context and Scalementioning

confidence: 93%

“…4 Therefore, sulfide chalcopyrite Cu(In,Ga)S 2 , due to its variable band gap between 1.5 and 2.4 eV, is receiving considerable interest as the absorber in the top cell of a tandem device. [5][6][7][8][9] Cu(In,Ga)S 2 adopts the chalcopyrite structure similar to high-efficiency Cu(In,Ga) Se 2 . Despite the high photoconversion efficiency (PCE) of 23.35% achieved using Cu(In,Ga)(S,Se) 2 , 10,11 the certified record PCE of pure sulfide Cu(In,Ga)S 2 solar cells remained limited to 15.5% thus far.…”

Section: Introductionmentioning

confidence: 99%

Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering

Shukla

Sood

Adeleye

et al. 2021

Joule

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Despite favorable optical properties and band-gap tunability, Cu(In,Ga)S 2 solar cell performance is often limited due to bulk and interface recombination losses. We show that Cu-deficient absorbers have lower bulk recombination, owing to the suppression of the detrimental antisite defects. Zn(O,S) buffer layer further lowers the interface recombination due to appropriate band alignment and suppression of defects at the interface. This leads to a high-quality absorber with lower interface losses, resulting in a high power conversion efficiency of over 15%.

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“…The Na atomic % content in high‐temperature glass is less than half the one in SLG, and the K atomic % content is more than an order of magnitude lower than SLG. We have to use higher temperatures for the sulfide absorbers because it was shown that temperature is a critical parameter for sulfide absorbers 2,20 . Otherwise, we try to keep the processes as similar as possible, in particular by using one‐stage processes for all absorbers investigated.…”

Section: Preparation and Treatment Of Solar Cells And Characterizatiomentioning

confidence: 99%

Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells

Sood

Elanzeery

Adeleye

et al. 2020

Progress in Photovoltaics

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Post‐device heat treatment (HT) in chalcopyrite [Cu (In,Ga)(S,Se)2] solar cells is known to improve the performance of the devices. However, this HT is only beneficial for devices made with absorbers grown under Cu‐poor conditions but not under Cu excess. We present a systematic study to understand the effects of HT on CuInSe2 and CuInS2 solar cells. The study is performed for CuInSe2 solar cells grown under Cu‐rich and Cu‐poor chemical potential prepared with both CdS and Zn(O,S) buffer layers. In addition, we also study Cu‐rich CuInS2 solar cells prepared with the suitable Zn(O,S) buffer layer. For Cu‐poor selenide device, low‐temperature HT leads to passivation of bulk, whereas in Cu‐rich devices, no such passivation was observed. The Cu‐rich devices are hampered by a large shunt. The HT decreases shunt resistance in Cu‐rich selenides, whereas it increases shunt resistance in Cu‐rich sulfides. The origin of these changes in device performance was investigated with capacitance–voltage measurement, which shows the considerable decrease in carrier concentration with HT in Cu‐poor CuInSe2, and temperature‐dependent current–voltage measurements show the presence of barrier for minority carriers. Together with numerical simulations, these findings support a highly doped interfacial p+ layer device model in Cu‐rich selenide absorbers and explain the discrepancy between Cu‐poor and Cu‐rich device performance. Our findings provide insights into how the same treatment can have a completely different effect on the device depending on the composition of the absorber.

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Quasi-Fermi-Level Splitting of Cu -Poor and Cu -Rich CuInS2

Cited by 32 publications

References 27 publications

Phonon coupling and shallow defects in CuInS2

Phonon coupling and shallow defects in CuInS2

Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering

Absorber composition: A critical parameter for the effectiveness of heat treatments in chalcopyrite solar cells

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