Quasi-One-Dimensional ZrS₃ Nanoflakes for Broadband and Polarized Photodetection with High Tuning Flexibility

Abstract

Two-dimensional (2D) layered materials with low crystal symmetries have exhibited unique anisotropic physical properties. Here, we report systematic studies on the photoresponse of field effect transistors (FETs) fabricated using quasi-one-dimensional ZrS3 nanoflakes. The as-fabricated phototransistors exhibit a broadband photocurrent response from ultraviolet to visible regions, where the responsivity and detectivity can be enhanced via additional gate voltages. Furthermore, benefiting from the strong in-plane anisotropy of ZrS3, we observe a gate-voltage and illumination wavelength-dependent polarized photocurrent response, while its sub-millisecond-time response speed is also polarization-dependent. Our results demonstrate the flexible tunability of photodetectors based on anisotropic layered semiconductors, which substantially broadens the application of low symmetry layered materials in polarization-sensitive optoelectronic devices.

Low-dimensional van der Waals materials for linear-polarization-sensitive photodetection: materials, polarizing strategies and applications

“…As shown in figures 7(b) and (c), it is evident that the photocurrent is highly dependent on the polarization direction of the linearly polarized incident light under various bias conditions, exhibiting a periodical evolution. Specifically, the linear DR reaches ≈1.64, which is comparable to those of some of the state-ofthe-art low-symmetry vdWM photodetectors [63, 136,196,197]. The unique polarization-discriminating photosensitivity is attributed to that the self-rolled 3D MoS 2 phototransistor can function as a low-symmetry optical resonator, where the optical resonant modes are highly polarized.…”

“…Thus far, researchers have prepared numerous polarized photodetectors based on a variety of anisotropic 2D vdWMs, including group VA semiconductors [71, [125][126][127][128][129], nonprecious transition metal chalcogenides (MX 2 [130][131][132][133][134], MX 3 [135][136][137][138][139][140][141], MX 5 [142]), IIIA-VIA compounds [123,143,144], IVA-VA compounds [123,[145][146][147][148][149][150][151], IVA-VIA compounds [120,121,[152][153][154][155][156], precious transition metal chalcogenides [157][158][159][160][161][162][163][164], multielemental vdWMs [72, 73, 165-173], etc. For clarity, table 2 has summarized the key performance metrics of various 2D vdWM polarizationsensitive optoelectronic devices.…”

Symmetry-Reduction Enhanced Polarization-Sensitive Photoresponse Based on One-Dimensional van der Waals Materials

“…As can be seen, the photocurrent is boosted upon increased power density over the entire gate voltage (−60 to 60 V). Specifically, those transfer characteristics exhibit a prominent leftward shift upon increased power density, which is produced by the photogenerated trapped holes . Those trapped states can act as a local gate to modulate the channel conductance effectively, implying the photogating effect could be one of the photocurrent generation mechanisms. , The relationship between the photocurrent ( I ph ) and power density ( P ) under different gate voltages is further analyzed, as shown in the log–log plot in Figure (c).…”

“…The unique 1D structure and the partial occupation of the Pd sites will favor the photogating effect in the Nb 2 Pd 1– x Se 5 nanowires. However, the contribution of the photogating effect is greatly suppressed under negative gate voltage due to the compensation of photogenerated holes when applying the negative gate voltage . Moreover, the fast photoresponse of the Nb 2 Pd 1– x Se 5 photodetector could be attributed to the following reasons: (1) The relatively large thickness of Nb 2 Pd 1– x Se 5 nanowires can suppress the scattering of photoinduced carriers .…”

Raman Spectroscopy Application in Anisotropic 2D Materials

“…The anisotropic 2D materials, typified by black phosphorus (BP), WTe 2 , ReS 2 , etc, have attracted extensive attention due to their exceptional optical, thermal, and electromagnetic properties. [1][2][3][4][5][6][7][8][9] 2D anisotropic materials offer the possibility of developing a new generation of multifunctional lowdimensional flexible electronic and optoelectronic devices, such as polarizationsensitive photodetectors, [10][11][12][13][14][15][16] ultrahigh photoresponsivity, [17][18][19] energy storage, [20,21] photocatalysis, [22][23][24][25] humidity sensors [26,27] etc. For instance, the hole Hall mobility of BP-based field-effect transistors (FETs) varies by 1.6-fold in the "zigzag" and "armchair" directions [9] Triclinic ReS 2 exhibits charge distributions primarily along the zigzag direction, leading to faster charge carrier diffusion and the strongest Raman enhancement when CuPc molecules align this way, offering insights into the chemical mechanism-based surfaceenhanced Raman spectroscopy (SERS) enhancement and emphasizing the importance of substrate symmetry [28] Raman spectroscopy has played a crucial role in characterizing 2D materials, allowing the determination of layer thickness [29] edge chirality [30] lattice orientation [31] doping, [32,33] alloy composition, [34] applied stress, [35][36][37]…”