Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_3

Myers, Lawrence E.; Eckardt, R. C.; Fejer, M. M.; Byer, Robert L.; Bosenberg, W. R.; Pierce, J.W.

doi:10.1364/josab.12.002102

Cited by 1,100 publications

(419 citation statements)

References 33 publications

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“…Z-cut LN wafers were polished down to the thickness of 220 m, and 180°domains were then produced by means of electric-field poling. 10 Two types of Al gratings were fabricated on the z ϩ crystal face ͑20-m period for sample N3, and a four-sectioned grating with 8-, 12-, 16-, and 20-m periods for sample N4͒. The z Ϫ crystal face was covered with an Al layer, and a couple of 0.2-s-long electric-field pulses with the strength of ϳ25 kV/mm were applied to the electrodes.…”

mentioning

confidence: 99%

Second-harmonic imaging of ferroelectric domain walls

Bozhevolnyi¹,

Hvam²,

Pedersen

et al. 1998

Applied Physics Letters

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Domain walls in periodically poled ferroelectric KTiOPO4 and LiNbO3 crystals are observed by making use of second-harmonic (SH) generation enhancement in the transition regions between neighboring domains. SH images of domain walls obtained with various samples for different polarization configurations are presented. The SH generation enhancement is found especially pronounced for the polarization of the SH radiation being perpendicular to the domain walls. The origin and selection rules for the contrast in SH images of domain walls are discussed. The results obtained suggest that the domain walls produce a deteriorating effect on SH generation by quasiphase matching.

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confidence: 99%

Second-harmonic imaging of ferroelectric domain walls

Bozhevolnyi¹,

Hvam²,

Pedersen

et al. 1998

Applied Physics Letters

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“…Ferroelectric single-crystals, thin films and ferroelectric-based nanosized heterostructures attract permanent interest due to their unique electrophysical and electromechanical properties and promising possibilities for next-generation of memory [1,2,3,4,5,6] and nonlinear optical devices [7,8]. Study of the polarization switching keeps central place in the investigations of ferroelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Morozovska

Eliseev

Ievlev

et al. 2014

Journal of Applied Physics

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We consider a typical heterostructure "domain patterned ferroelectric film − ultra-thin dielectric layer − semiconductor", where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene.Unexpectedly we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-degree domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers.

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“…Nonlinear optical processes such as frequency conversion are based on quasi-phase matching, which requires periodic domain inversion of the crystal's spontaneous polarization P s at submicron-to-few microns periods depending on the wavelengths involved in the nonlinear process [2]. As it is the case for many nonlinear processes, frequency conversion also requires high intensity laser light, which may induce optical damage to the crystal that results in the distortion of the optical beam.…”

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confidence: 99%

Ultraviolet laser-induced poling inhibition produces bulk domains in MgO-doped lithium niobate crystals

Boes

Steigerwald

Yudistira

et al. 2014

Applied Physics Letters

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Abstract:We report the realization of high-resolution bulk domains achieved using a shallow, ferroelectric, domain inverted surface template obtained by UV laser-induced poling inhibition (PI) in MgO-doped lithium niobate. The properties of the obtained bulk domains are compared to those of the template and their application for second harmonic generation is demonstrated. The present method enables domain structures with a period length as small as 3 µm to be achieved. Furthermore, we propose a potential physical mechanism that leads to the transformation of the surface template into bulk domains.

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Quasi-phase-matched optical parametric oscillators in bulk periodically poled LiNbO_3

Cited by 1,100 publications

References 33 publications

Second-harmonic imaging of ferroelectric domain walls

Second-harmonic imaging of ferroelectric domain walls

Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Ultraviolet laser-induced poling inhibition produces bulk domains in MgO-doped lithium niobate crystals

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