Quasi-Phase-Matched Parametric Fluorescence in a Periodically Inverted GaP Waveguide

Matsushita, Tomonori; Ohta, Ikuma; Kondo, Takashi

doi:10.1143/apex.2.061101

Cited by 26 publications

(13 citation statements)

References 22 publications

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“…The larger the period Λ , the easier is to fabricate the template and maintain good domain fidelity during the subsequent thick HVPE layer growth on the template. This rapidly increasing interest in GaP as an orientation-patterned QPM material led to the design of the first GaP frequency conversion device (FCD) based on stacked GaP wafers [10] and to the first demonstration of QPM parametric fluorescence in periodically inverted GaP [11]. OPO operation was also recently reported in OPGaP grown on native OPGaP templates, pumped at 2 µm [12] and at 1 µm [13].…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Tassev¹,

Vangala²,

Peterson³

et al. 2016

Opt. Mater. Express

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For the first time thick orientation-patterned GaP (OPGaP) was repeatedly grown heteroepitaxially on OPGaAs templates as a quasi-phase matched medium for frequency conversion in the mid and longwave IR, and THz regions. The OP templates were fabricated by wafer-bonding and in a MBE-assisted polarity inversion process. Standard low-pressure hydride vapor phase epitaxy (LP-HVPE) was used for one-step growth of up to 400 µm thick device quality OPGaP with excellent domain fidelity. The presented results can be viewed as the missing link between a welldeveloped technique for preparation of OP templates, using one robust nonlinear optical material (GaAs), and the subsequent thick epitaxial growth on them of another material (GaP). The reason for these efforts is that the second material has some indisputable advantages in point of view of thermal and optical properties but the preparation of native templates encounters challenges, which makes it difficult to obtain high quality homoepitaxial growth at an affordable price. Successful heteroepitaxial growth at such a relatively high lattice mismatch (-3.6%) in a close to equilibrium growth process such as HVPE is noteworthy, especially when previously reported attempts, for example, growth of OPZnSe on OPGaAs templates at about 10 times smaller lattice mismatch (+ 0.3%) have produced only limited results. Combining the advantages of the two most promising nonlinear materials, GaAs and GaP, is a solution that will accelerate the development of high power, tunable laser sources for the IR and THz region, which are in great demand on the market.

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Section: Introductionmentioning

confidence: 99%

Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Tassev¹,

Vangala²,

Peterson³

et al. 2016

Opt. Mater. Express

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show abstract

“…Interest in QPM GaP has increased rapidly, and frequency conversion devices (FCDs) based on stacks of GaP wafers have already been designed [8]. The epitaxial growth of periodic GaP structures by MBE [9,10] and MOCVD [11] has also been initiated. HVPE is the only approach, however, which is capable of producing apertures large enough for high power applications.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements

Tassev

Snure

Peterson

et al. 2012

Journal of Crystal Growth

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“…Also in Ref. 26, nondegenerate PF is reported in a 1.97 mm long quasi-phasematched GaP waveguide where the conversion efficiency was obtained to be 16 % W À1 cm À2 .…”

Section: -3mentioning

confidence: 88%

Semiconductor optical parametric generators in isotropic semiconductor diode lasers

Bijlani

Abolghasem

Helmy

2013

Applied Physics Letters

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We report on the characteristics of an intracavity semiconductor optical parametric generator in multiple-quantum well AlGaAs/InGaAs Bragg reflection waveguide lasers emitting between 986 and 995 nm. The cavity of the laser is phase-matched for down-conversion of pump photons to a signal between 1739 and 1767 nm and an idler between 2235 and 2328 nm. The normalized conversion efficiency is calculated to be 1.23×103 %W−1cm−2 above laser threshold and 1.25×104 %W−1cm−2 below threshold. The demonstrated device is potential for the realization of integrated parametric devices such as electrically pumped entangled photon-pair sources and optical parametric oscillation, where quantum optical effects can unfold.

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Quasi-Phase-Matched Parametric Fluorescence in a Periodically Inverted GaP Waveguide

Cited by 26 publications

References 22 publications

Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz

Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements

Semiconductor optical parametric generators in isotropic semiconductor diode lasers

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