Quasi-point incoherent ArF∗ excimer emission source at 193 nm using a laser-produced plasma

Abstract

We have demonstrated proof-of-principle of an incoherent ArF * emission source with a quasi-point emission geometry using a laser-produced plasma in an Ar/F 2 /He/Ne mixed gas. The VUV emission characteristics, such as the emission size, were dependent on those of the plasmainitiating laser. The average emission power was 10 µW at a repetition rate of 10 Hz at 193 nm. The average power conversion efficiency of the 193-nm emission from the plasmainitiating Nd:YAG laser was 6.3 × 10 −6 . The average emission power at 193 nm was proportional to that of the plasmainitiating laser, indicating the scaling of the emission source.

Theoretical and Experimental Exploration of Breakdown Phenomena in an Argon-Filled GaP Device

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Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

“…The SEE production has gained considerable attention lately due to the extensive applications of the microplasma devices including, semiconductor devices, microelectromechanical systems (MEMS), plasma display panels, excimer sources, lasers, microreactors, and electron multiplier . The SEE qualification is of attractive peculiarity to develop and control the timescale of breakdown or to influence the typical structure of the space–time distribution required for effective microplasma behaviors.…”