Quasi-Simultaneous Solution Method: A New Highly Efficient Strategy for Numerical MOST Simulations

A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations

“…For the DD model this slow convergence has been frequently reported e.g. [9] and it persists for the HD model, where the coupling between the equations is even stronger as will be discussed later. Hence some authors e.g.…”

“…As discussed already in [9] this is sufficient to resolve the coupling within the inversion channel.…”

On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

“…This approach converges asymptotically linear with the simulation time similar to the convergence behavior of the Gummel loops in the drift-diffusion based TCAD device simulators [1,15]. Thus the proposed approach is much faster than a Monte Carlo algorithm which gains numerical accuracy proportional to the square root of the CPU time [16].…”

“…This approach converges linearly with simulation time similar to the Gummel loop in the classical drift-diffusion based TCAD device simulators [1,15], and thus much faster than an MC algorithm with its square root dependence [16]. In addition, it yields a truly stationary solution.…”

“…[1,15]), the carrier density is defined on the direct grid and the current density on the adjoint grid. Similarly the unknowns g m of the projected BTE (55) are defined either on the direct or adjoint grid depending on the parity of m. The "densities" (m even) are defined on the direct grid and the "fluxes" (m odd) on the adjoint.…”