Quasi van der Waals epitaxy nitride materials and devices on two dimension materials

Liang, Dongdong; Wei, Tongbo; Wang, Junxi; Li, Jinmin

doi:10.1016/j.nanoen.2020.104463

Cited by 55 publications

(42 citation statements)

References 173 publications

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“…for its lattice structure and bandgap can be well controlled. As confirmed by Wang et al, through theoretical calculation and experiment, the lattice structures of 2D GaN would change from R3m It should be mentioned that graphene can also act as an encapsulation layer for 2D GaN growth in addition to being a buffer layer for 3D or 1D GaN epitaxy [25,52]. Specifically, 2D GaN has great potential for the development of deep ultraviolet light-emitting diodes, energy conversion devices, etc.…”

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 85%

“…Heilmann et al performed GaN nanorods growth on a graphene-coated silicon substrate in 2016. They claimed that the introduction of the graphene buffer layer solved the lattice symmetry inconsistency and melt-back etching problem, whereas applying AlGaN for nucleation solved the GaN uneven nucleation distribution and random orientation problem [13] (Figure 2e It should be mentioned that graphene can also act as an encapsulation layer for 2D GaN growth in addition to being a buffer layer for 3D or 1D GaN epitaxy [25,52]. Specifically, 2D GaN has great potential for the development of deep ultraviolet light-emitting diodes, energy conversion devices, etc.…”

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

“…It should be mentioned that graphene can also act as an encapsulation layer for 2D GaN growth in addition to being a buffer layer for 3D or 1D GaN epitaxy [ 25 , 52 ]. Specifically, 2D GaN has great potential for the development of deep ultraviolet light-emitting diodes, energy conversion devices, etc.…”

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

“…More specifically, the number of graphene layers and the substrate polarity both have an impact on the epilayer’s orientation. [ 52 , 53 ]. In 2012, Choi et al claimed that a GaN film grown on a graphene-covered sapphire substrate remained the same lattice symmetry and orientation with the underlying sapphire substrate.…”

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

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Van der Waals Epitaxy of III-Nitrides and Its Applications

et al. 2020

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III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.

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Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 85%

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

Section: Van Der Waals Epitaxy Of Iii-nitrides On Graphenementioning

confidence: 99%

See 2 more Smart Citations

Van der Waals Epitaxy of III-Nitrides and Its Applications

et al. 2020

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“…In recent years, a novel approach to the growth of III-nitrides has emerged, based on 2D materials, such as graphene, as interlayers between the substrate and the epitaxial layer [ 1 , 2 , 3 ]. Compared to the usual buffer layers, the graphene interlayer has some advantages owing to the weak van der Waals (vdW) bond at the epilayer/graphene interface; the thermal expansion and lattice mismatch requirements are relaxed [ 4 ], resulting in reduced defect density [ 5 , 6 , 7 ], and the epilayer can be mechanically exfoliated and transferred to any substrate of interest [ 3 , 8 , 9 ]. Furthermore, the monolayer graphene does not completely screen the electrostatic potential of the substrate, which enables the epilayer to follow the crystalline template of the substrate [ 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

et al. 2022

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The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.

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Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes

Chen

Chang

Cheng

et al. 2020

Adv Funct Materials

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Direct growth of graphene films on functional substrates is immensely beneficial for the large‐scale applications of graphene by avoiding the transfer‐induced issues. Notably, the selective growth of patterned graphene will further boost the development of graphene‐based devices. Here, the direct growth of patterned graphene on the c‐plane of nanopatterned sapphire substrate (NPSS) is realized and the superiority of the patterned graphene for high‐performance ultraviolet light‐emitting diodes (UV‐LED) is demonstrated. As confirmed by density functional theory calculations and analog simulations, compared to the concave r‐plane the flat c‐plane of NPSS is characterized by a lower active barrier for methane decomposition and carbon species diffusion, as well as a greater supply of carbon precursor for graphene growth. The synthesized patterned graphene on the c‐plane of NPSS is verified to be monolayer and high quality. The patterned graphene enables the selective and well‐aligned nucleation of aluminium nitride (AlN) to promote rapid epitaxial lateral overgrowth of single‐crystal AlN films with low dislocation density. Consequently, the fabricated UV‐LED demonstrates high luminescence intensity and stability. The method is suitable for obtaining various patterned graphene by substrate design, which will allow for greater progress in the cutting‐edge applications of graphene.

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Quasi van der Waals epitaxy nitride materials and devices on two dimension materials

Cited by 55 publications

References 173 publications

Van der Waals Epitaxy of III-Nitrides and Its Applications

Van der Waals Epitaxy of III-Nitrides and Its Applications

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes

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