Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

Kühnelt, M.; Leichtner, T.; Kaiser, S.; Hahn, B.; Wagner, Hans-Peter; Eisert, D.; Bacher, G.; Forchel, A.

doi:10.1063/1.121863

Cited by 18 publications

(8 citation statements)

References 7 publications

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“…Epitaxial ZnSe thin films are usually grown on GaAs substrates to achieve lattice matching (0.27% mismatch) for applications in laser diodes [2], solar cells [3], second harmonic generation [10] and nonlinear switching [11]. However, the deposition of non-epitaxial several microns thick films of ZnSe on silicon (Si) is challenging mainly because of dissimilar thermal expansion and distinct chemical properties [12].…”

Section: Introductionmentioning

confidence: 99%

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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Zinc Selenide (ZnSe) is a promising mid-infrared waveguide material with high refractive index and wide transparency. Optical quality ZnSe thin films were deposited on silicon substrates by RF sputtering and thermal evaporation, and characterized and compared for material and optical properties. Evaporated films were found to be denser and smoother than sputtered films. Rib waveguides were fabricated from these films and evaporated films exhibited losses as low as 0.6 dB/cm at wavelengths between 2.5 µm and 3.7 µm. The films were also used as isolation/lower cladding layers on Si with GeTe 4 as the waveguide core and propagation losses were determined in this wavelength range.

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Section: Introductionmentioning

confidence: 99%

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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“…Only few investigations report on the dispersion of ͉ 14 (2) ͉ in wide-gap II-VI semiconductors, 13,14 although these materials possess high SHG coefficients and thus have the potential for efficient SHG in the visible spectral region using II-VI waveguide structures. [15][16][17] A microscopic expression for ͉ 14 (2) ͉ can be obtained from second-order perturbation calculations. [18][19][20][21][22] However, a complete understanding of the dispersion of ͉ 14 (2) ͉ requires detailed information of the energies and wave functions of the electronic states in the entire first Brillouin zone ͑BZ͒.…”

Section: Introductionmentioning

confidence: 99%

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

et al. 1998

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We have measured the absolute values of the second-harmonic generation ͑SHG͒ coefficient ͉d͉ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation F ranges from 520 to 1321 nm using various pulsed laser sources. In the transparent region of the II-VI semiconductors, the SHG coefficient exceeds the values of birefringent materials as ammonium dihydrogen phosphate ͑ADP͒ and potassium dihydrogen phosphate ͑KDP͒ by one or two orders of magnitudes. Above the E 0 band gap a strong dispersion of ͉d͉ is observed, showing a maximum for a second-harmonic frequency close to the E 1 gap. The experimental results are compared to calculated values using a simple three-band model including spin-orbit splitting. Substantial agreement is found to the experimentally observed dispersion of the second-order nonlinear susceptibility. ͓S0163-1829͑98͒06539-4͔

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“…Recently, promising results have also shown that a multi-layer strategy 6 and artificial periodic structures 14 can be employed to improve phase matching.…”

Section: Cw Blue-green Light Emission From Gan and Sic By Sum-frequenmentioning

confidence: 98%

CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation

Chao

Steckl

2000

Journal of Elec Materi

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GaN and SiC are wide band gap semiconductors (WBGS) well known for their chemical and thermal stability and are widely used in optoelectronics, 1,2 and high-power, high temperature 3,4 devices, respectively. The initial interest in GaN was centered on the fabrication of blue light emitting diodes (LEDs) and laser diodes. However, the band gap of GaN can also be tailored by alloying with In and Al to produce light emission from UV to infrared. Recently, the success of the incorporation of rare earth elements into GaN has ushered in a new technique of making light-emitting diodes. 5 On the other hand, the research and development in SiC technology has also produced significant progress over the past five years. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. An interesting, but less explored, area is the nonlinear optical (NLO) properties of these WBGS materials. Both GaN and SiC have large NLO coefficients. 6-8 By combining their excellent electronic/optical properties with NLO properties, a truly integrated optical circuit can be envisioned where light sources, detectors, modulators, switches and processing circuits can be fabricated monolithically. It has been shown that the second-order nonlinearities of GaN 6 and SiC 7,8 are an order of magnitude larger than Continuous wave (CW) back-scattered sum-frequency generation (SFG) and second harmonic generation (SHG) have been obtained from GaN and SiC. GaN samples were obtained from GaN films grown by molecular-beam epitaxy (MBE), metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy. The SiC samples were obtained from 3C SiC/Si grown by chemical vapor deposition (CVD), 4H and 6H single crystal SiC substrates. The samples were optically excited with two CW lasers at the red (840 nm) and the infrared (1.0 µm). SHG at 420 nm and 500 nm and SFG at 455 nm were observed. SFG and SHG were verified by measuring their relative intensities against the pumping laser power. The SHG signals from GaN and SiC samples are compared with that from KH 2 PO 4 (KDP).

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Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation

Cited by 18 publications

References 7 publications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation

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