Quaternary AlInGaN multiple quantum well 368nm light-emitting diode

Tunable Luminescence Properties of CaIn2O4:Eu3+ Phosphors

“…[19][20][21][22][23][24][25][26] Ultraviolet light-emitting diodes (UVLEDs) based on wide band gap III-nitride compound semiconductors have attracted the attention of researchers because of their potential applications for solid-state white lighting. 27 The quest for new UVLED converted phosphors has triggered active research efforts in the investigation of whiteemitting materials using longer UVLED (300-410 nm) instead of the blue irradiation (460 nm) from GaInN chips as the excitation source. 28 This has generated a great interest in developing new white-emitting phosphors via chemical approaches.…”

“…Nowadays the use of phosphors represents a fast growing industry due to the wide range of applications: light-emitting diodes (LEDs), cathode ray tubes (CRTs), field emission displays (FEDs), vacuum fluorescent displays (VFDs), plasma display panels (PDPs), and X-ray imaging scintillators. − Oxide phosphors have gained interest due to their better thermal and chemical stability and environmental friendliness compared with sulfides, which are currently used in the screen of flat-panel displays (FPDs), VFDs, and FEDs. − Therefore, more attention has been paid to the improvement of original oxide phosphors and (or) developing new oxide phosphors materials with respect to the wide possible applications. − Ultraviolet light-emitting diodes (UVLEDs) based on wide band gap III-nitride compound semiconductors have attracted the attention of researchers because of their potential applications for solid-state white lighting . The quest for new UVLED converted phosphors has triggered active research efforts in the investigation of white-emitting materials using longer UVLED (300−410 nm) instead of the blue irradiation (460 nm) from GaInN chips as the excitation source .…”

Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

“…2,9) A considerable amount of research has been conducted to investigate AlInGaN as QWs in UV LEDs. 10,11) However, to date, the optoelectronic characteristics of AlInGaN/InGaN MQWs are quite limited partially owing to the difficult growth of these heterostructures with device quality. In this study, we used AlInGaN, which is lattice-matched to GaN, as the barriers, and investigated the influence of its thickness on the UV LED.…”

Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

“…2,9) Considerable research has been conducted to investigate the applications of InAlGaN as QWs in UV LEDs. 10,11) In this study, we used InAlGaN, which was lattice-matched to GaN, as the barriers, and investigated the influence of its thickness on UV LEDs. On the basis of our study, a superior optical performance is obtained owing to the preferred carrier confinement and strong exciton localization effect.…”