Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

Abstract

The effects of using lattice-modulated AlInGaN as barriers in the active region were investigated in near-ultraviolet light-emitting diodes (LEDs). Both a stronger localization effect with wider barriers and a higher energy band gap existed in AlInGaN/InGaN LEDs, compared with GaN/InGaN LEDs. An increase in the carrier concentration in the active layer, a reduction in lattice mismatch that induced polarization mismatch in the active layer, and suppression of electron overflow can be found by numerical simulation. By 100 mA current injection, the AlInGaN/InGaN LED output power can be increased by 33.1%, compared with that of GaN/InGaN LED.

Porous Quaternary Al0.1In0.1Ga0.8N Film Formation via Photoelectrochemical Etching in HF:C2H5OH Electrolyte

“…Employment of quaternary Al x In y Ga 1‐ x ‐ y N layer in GaN‐based heterostructure would be a solution, owing to an ability of band gap tuning as well as the presence of in sites as radiative recombination centers in the Al x In y Ga 1‐ x ‐ y N layer for PL enhancement . Nonetheless, issues related to defect generation and/or dislocations either in the Al x In y Ga 1‐ x ‐ y N layer or overgrown layers are unavoidable . To circumvent these issues, an alteration of Al x In y Ga 1‐ x ‐ y N surface structure through pore formation has been attempted using UV‐assisted photoelectrochemical (PEC) etching in different diluted potassium hydroxide (KOH) concentrations (1%, 2%, 3%, and 4%) and different current densities (20, 40, 80, and 160 mA/cm 2 ) in a fixed 1% KOH solution .…”

Effects of pulsed Al injection on InGaN/GaN multi-quantum well structures grown by MOCVD

“…The In composition can be increased gradually to introduce higher In content in the film [23]. Quaternary InAlGaN alloys can produce a broad range of bandgap layers and lattice matched layers to minimize strain [24]. The introduction of AlN or AlGaN prior to InGaN quantum well (QW) can produce self-assembled nano-disktype nano-structures, which leads to higher In content incorporation in the form of nanostructures [25,26].…”