Effects of ultraviolet-assisted electrochemical etching current densities on structural and optical characteristics of porous quaternary AlInGaN alloys

First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys

“…The other results are first reported through this study. The effect of Aluminum and Indium addition on the lattices of β-Ga 2 O 3 alloys are primarily attributed to the atomic size difference in the material, which is also consistent with observations shown in III-Nitride-based quaternary materials [7,[35][36][37][38]. Specifically, aluminum atom is smaller than Gallium atom while Indium atom is larger than Gallium atom.…”

“…β-(Al x In y Ga 1−x−y ) 2 O 3 alloys) is non-existent in literature by far. It is important to point out that quaternary alloy layer has been implanted in well-established III-Nitride and III-V materials class to achieve desirable device performance [4,6,[31][32][33][34][35][36][37][38][39][40][41][42][43]. Quaternary alloys typically allow large tuning range of structural, electronic and optical properties that are different from the host material.…”

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

“…The formation of oxygen vacancies as well as incorporation of nitrogen ions in the Al x Zr y O z lattice during nitrogen‐infused oxidation process would eventually alter lattice parameters, c and a , as well as the ratio of cell parameters ( RCP ) of the Al x Zr y O z films. The lattice parameters, c and a , as well as RCP of the investigated Al x Zr y O z films, could be calculated based on the following equations 17,18 : where λ is the wavelength of X‐ray radiation (0.15406 nm), n is the order of diffraction, d hkl is interplanar spacing, ( hkl ) is Miller's indexes, and θ is diffraction angle. Figure 2 shows the calculated lattice parameters, c and a , as well as RCP of Al x Zr y O z films grown using different nitrogen gas flow rates (Table 1).…”

“…The formation of oxygen vacancies as well as incorporation of nitrogen ions in the Al x Zr y O z lattice during nitrogen-infused oxidation process would eventually alter lattice parameters, c and a, as well as the ratio of cell parameters (RCP) of the Al x Zr y O z films. The lattice parameters, c and a, as well as RCP of the investigated Al x Zr y O z films, could be calculated based on the following equations 17,18 :…”