Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Kašpar, Zdeněk; Surýnek, Miloslav; Zubáč, Jan; Krizek, Filip; Novák, V.; Campion, R. P.; Wörnle, M. S.; Gambardella, Pietro; Martí, X.; Němec, Petr; Edmonds, K. W.; Reimers, Sonka; Amin, Oliver J.; Maccherozzi, Francesco; Dhesi, S. S.; Wadley, P.; Wunderlich, J.; Olejník, K.; Jungwirth, T.

doi:10.1038/s41928-020-00506-4

Cited by 44 publications

(62 citation statements)

References 33 publications

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“…This is orders of magnitude less than energy obtained in the ms regime 7 (where a 5V USB, 50ms pulse and 46mA were used to switch CuMnAs/GaP). The 1.2nJ is also in the same order of magnitude of energy needed by fs-pulsing laser for ultra-fast optical switching 25 . The fact that the energy required for the switching depends only weakly on the pulse duration from ns to fs indicates that current induced heating plays a role in the switching of AF domains 26 .…”

Section: Orthogonal Switchingmentioning

confidence: 86%

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Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Omari

Barton

Amin

et al. 2020

Journal of Applied Physics

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The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic memory devices. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond down to picosecond, but with little focus on nanosecond regime. We demonstrate here switching of CuMnAs/GaP using nanosecond pulses. Our results showed that in the nanosecond regime low-energy switching, high readout signal with highly reproducible behaviour down to a single pulse can be achieved. Moreover, a comparison of the two switching methods of orthogonal switching and polarity switching was performed on the same device showing distinct behavior that can be exploited selectively for different future memory/processing applications.

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Section: Orthogonal Switchingmentioning

confidence: 86%

Section: Orthogonal Switchingmentioning

confidence: 90%

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Omari

Barton

Amin

et al. 2020

Journal of Applied Physics

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“…Previously, the detected onoff signals in AFM spintronics are normally below 0.01 based on SMR [37] or AMR, [5] and around 0.2 based on antiferromagnetferromagnet phase transition [14] or fragmented domain states. [40] This is caused by the concomitant electrical current and intrinsic nonvanishing off state signal. In our AFM sandwich structure here, when the Néel vector is perpendicular to spin polarization, the magnon is blocked and the read-out signal is vanishingly small, resulting in the intrinsic giant on-off ratio.…”

Section: Antiferromagnetic Magnon Drag Effect and Giant On-off Ratiomentioning

confidence: 99%

Antiferromagnetic Magnon Drag Effect and Giant On–Off Ratio in a Vertical Device

et al. 2022

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Antiferromagnets offer unique advantages in the development of spintronics because of the absence of stray field, insensitivity to external disturbances and the ultrafast terahertz eigenfrequency, advancing the development of devices toward small-size and high-speed. However, the ultralow read-out signals of antiferromagnetic spintronics are notoriously smaller than their ferromagnetic counterpart, seriously hindering the development of antiferromagnets. Thus, experimental realization of large read-out signals in antiferromagnets, especially in vertical devices, is intensely pursued. Here the antiferromagnetic magnon drag effect and a giant on-off ratio of ≈1000 are realized in a vertical sandwich structure of heavy metal/antiferromagnetic insulator/heavy metal (Pt/𝜶-Fe 2 O 3 /Pt). The read-out signal can exist up to room temperature, and the detected signal owing to the transmission and blocking of magnon strongly relies on the relative orientation between spin polarization and Néel vector. Benefiting from the nonvolatile characteristic of Fe 2 O 3 , zero-field vertical magnon transport is achieved. The giant on-off signals in vertical devices that can be tightly packed, can greatly promote the practical application of antiferromagnetic magnon devices toward smaller, faster, and lower energy consumption.

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“…Moreover, AF order is exhibited in a wide range of materials compatible with the properties of insulators, semiconductors and metals. Electrical switching has been achieved in several AF systems, with the resulting current-induced domain modifications attributed to spin-orbit torques or thermomagnetoelastic effects [4][5][6][7] . Spin-orbit torque manipulation of AF domains was first achieved using orthogonal current pulses to induce 90°rotations of the AF order parameter, but more recently current-polarity dependent switching of AF order has been achieved and ascribed to domain wall motion 8 .…”

Section: Introductionmentioning

confidence: 99%

Defect-driven antiferromagnetic domain walls in CuMnAs films

Reimers,

Kriegner,

Gomonay

et al. 2021

Preprint

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Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices.AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects.We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180°and 90°domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

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Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Abstract: 6Ž elezný, J. et al. Relativistic Néel-order fields induced by electrical current in antiferromagnets.

Cited by 44 publications

References 33 publications

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses

Antiferromagnetic Magnon Drag Effect and Giant On–Off Ratio in a Vertical Device

Defect-driven antiferromagnetic domain walls in CuMnAs films

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