Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

Sukrittanon, S.; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, Katherine L.; Tu, C. W.; Dayeh, Shadi A.

doi:10.1063/1.4959821

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…Dilute nitride-based NWs and microwires (MWs) were also fabricated using the top-down approach. Sukrittanon et al [58] employed this method to fabricate n-GaP/i-GaNP/p-GaP p-i-n structures. The p-GaP cores with the diameter of 2 μm were produced by reactive-ion etching (RIE) of a (001) GaP substrate with a dot array pattern defined by photolithography.…”

Section: Top-down Approachmentioning

confidence: 99%

“…The significant increase in the oscillator strength of the bandto-band optical transitions in GaNP makes this material attractive for a wide-bandgap junction of dual junction solar cells. Prototype solar cells utilizing GaNP in the NW geometry were fabricated from p-i-n GaNP-based MWs [58] using top-down etching combined with MBE overgrowth as discussed in section 2.2. The cell performance was examined as a function of the geometrical parameters of the MW arrays such as the array period and MW length.…”

Section: Solar Cellsmentioning

confidence: 99%

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Dilute nitrides-based nanowires—a promising platform for nanoscale photonics and energy technology

Buyanova

Chen

2019

Nanotechnology

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Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.

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Section: Top-down Approachmentioning

confidence: 99%

Section: Solar Cellsmentioning

confidence: 99%

Dilute nitrides-based nanowires—a promising platform for nanoscale photonics and energy technology

Buyanova

Chen

2019

Nanotechnology

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“…It is abundant, nontoxic, and well established in industry. In addition, solar cells, nanowires, and water-splitting solar cells were demonstrated with Ga(N,P). − …”

Section: Introductionmentioning

confidence: 99%

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

et al. 2020

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III/V semiconductors containing small amounts of nitrogen (dilute nitrides) are promising for applications such as lasers and solar cells. Metal−organic vapor-phase epitaxy (MOVPE) is a widely used technique for growing III/V semiconductors on an industrial scale, and the growth of dilute nitrides with this method is promising for later successful market entry. The main issues of dilute nitrides are carbon incorporation and low nitrogen incorporation efficiency of the conventional N precursors. Due to the high N incorporation efficiency and the low decomposition temperature of the As and N precursor di-tert-butylaminoarsane (DTBAA), a similar P-and N-containing precursor, di-tert-butylaminophosphane (DTBAP), was synthesized and purified on a laboratory scale. Growth studies using this precursor were carried out in this work realizing Ga(N,P)/GaP multi quantum wells on Si and GaP substrates. The structures show evidence of N incorporation, and good layer structures were confirmed by high-resolution X-ray diffraction. Following the influence of different growth parameters on the N incorporation, the growth rate and surface morphology were characterized to set a foundation for possible growth applications in the future. DTBAP shows many advantages over the conventional N source 1,1-dimethylhydrazine (UDMHy) such as a much lower decomposition temperature of 310 °C and the realization of Ga(N,P) layers grown at temperatures as low as 475 °C with a high N incorporation of over 10%. Furthermore, the gas-phase decomposition of DTBAP has been studied with a real-time fast Fourier transform quadrupole ion trap mass spectrometer attached inline to the MOVPE reactor. The decomposition of DTBAP behaves very similarly to the As analogue DTBAA. On the one hand, the tert-butyl groups attached to DTBAP decompose radically, leading to the formation of isobutane, and decompose, on the other hand, by β-H elimination, leading to the formation of isobutene. Furthermore, the decomposition products indicate a direct cleavage of the P−N bond of the molecule, resulting in the formation of aminyl radicals (NH 2• ). The formation of NH 2 • explains the high N incorporation efficiency of DTBAP at low temperatures as well as its limitations due to loss of NH 3 at higher temperatures.

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Modification of TiO2 with sodium borohydride and its influence on photovoltaic cell performance

Wang,

Peng,

Wang

et al. 2024

Ionics

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Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

Cited by 3 publications

References 29 publications

Dilute nitrides-based nanowires—a promising platform for nanoscale photonics and energy technology

Dilute nitrides-based nanowires—a promising platform for nanoscale photonics and energy technology

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

Modification of TiO2 with sodium borohydride and its influence on photovoltaic cell performance

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