Radiation Damage of Semiconductor Device by X-ray

Kim, D.S.; Hong, Hao; Park, H.M.; Kim, J.H.; Joo, Koan-Sik

doi:10.14407/jrp.2015.40.2.110

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…For example, X-ray laminography, a technique that captures tomographic photos of a sample multilayer by using the data obtained from X-rays and a detector, is used for nondestructive inspection. However, recent studies on the damage caused to semiconductors by the TID (total ionizing dose) effect of BJTs (bipolar junction transistors) raised the issue of low-energy X-rays causing damage to semiconductors [1]. TID is mostly caused by charge trapping when electron holes form between silicon and silicon dioxide in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

X-ray Spectra Calculations for Inspection of Semiconductors with Different Target/Filter Combinations Using MCNPX

Kim¹,

Park²,

Park³

et al. 2016

JPSA

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X-rays are commonly used for inspecting semiconductors. However, excessive radiation dose could damage semiconductors. Therefore, unnecessary exposure needs to be reduced. The ray quality, which is influenced by the tube voltage and filter, determines the exposure. We designed an X-ray tube for inspecting semiconductors with different target/filter combinations and calculated X-ray spectra using the MCNPX (Monte Carlo n-particle extended) code. The target material was W, and the filters were made of Mo, W, and Zr. The W/W combination showed the lowest flux. The MCNPX code can reduce the development time and cost of the target/filter combination for inspecting semiconductors.

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Section: Introductionmentioning

confidence: 99%