Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

Akturk, Akin; McGarrity, J.M.; Potbhare, Siddharth; Goldsman, N.

doi:10.1109/tns.2012.2223763

Cited by 126 publications

(63 citation statements)

References 20 publications

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“…Electronic circuits in space shuttles made using MOSFETS are prone to the different types of radiations present in various areas of space, hence they need to be designed accordingly to ensure they work accurately [6].…”

Section: Radiations and Their Damaging Mechanismsmentioning

confidence: 99%

Threshold Voltage and Drain Current Investigation of Power MOSFET ZVN3320FTA by 2D Simulations

Kannan

Hesham

Gandhi

et al. 2019

International Journal of Simulation: Systems, Science &Amp; Technology

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Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation.

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Section: Radiations and Their Damaging Mechanismsmentioning

confidence: 99%

Threshold Voltage and Drain Current Investigation of Power MOSFET ZVN3320FTA by 2D Simulations

Kannan

Hesham

Gandhi

et al. 2019

International Journal of Simulation: Systems, Science &Amp; Technology

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“…Modified Caughey-Thomas mobility model was used (2) where represents mobility of undoped material, represents mobility in highly doped material, is the doping concentration at which the mobility determines how quickly the mobility changes from to and is empirical fitting constant. The effect of neutron irradiation on the input characteristics is shown in Fig.…”

Section: Characteristics Of Irradiated Jfets (Measurement and Simumentioning

confidence: 99%

“…2.5 times. The main source of the growth is reduction of conductivity due to the decrease in electron concentration (1) and mobility (2). For the fluence of , the linear dependence is violated and rises 14.7 times.…”

Section: Characteristics Of Irradiated Jfets (Measurement and Simumentioning

confidence: 99%

“…Today, MOSFETs are commercially available, but better radiation resistance of JFETs is anticipated since they do not need sensitive gate insulator layer. Irradiation effects of gamma rays, protons on SiC JFET [1] and MOSFET [2] has been reported, but investigation of neutron radiation effects is rare and made only on laboratory samples [3].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling

Popelka

Hazdra

Sharma

et al. 2014

IEEE Trans. Nucl. Sci.

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The effect of neutron irradiation on commercial vertical high voltage normally-OFF SiC power N-JFETs was investigated. JFETs were irradiated with 1 MeV neutron equivalent fluences up to cm . Measurement showed that fast neutrons introduce deep levels acting mostly as deep acceptor centers. These centers gradually compensate lightly doped channel and drift regions of JFETs. As a result, characteristics are deteriorated, the JFET threshold voltage gradually increases and transconductance is lowered. At fluences higher than cm , the low doped n-regions are fully compensated and transistor loses its functionality. The 2D physical model of JFET in ATLAS simulator was developed and calibrated including the neutron irradiation effects. Simulation showed a good agreement with experimental data. This confirmed that carrier removal in the channel and drift region by acceptors centers introduced by neutrons is a dominant reason of SiC JFET degradation. Index Terms-Junction field effect transistor (JFET), neutrons, radiation effects, silicon carbide (SiC).

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“…Previous studies on 4H-SiC Schottky diodes irradiated up to 1 Mrad gamma ray dose have shown no degradation in forward current-voltage characteristics, but an increase in reverse breakdown voltage is observed due to negative charge build-up in the passivation oxide [18]. On the other hand, commercially available 4H-SiC power MOSFETs irradiated up to 1.5 Mrad of gamma ray at room temperature show a large negative threshold voltage shift and becomes inoperative after a dose of only 300 krad [19].…”

Section: Introductionmentioning

confidence: 99%