Threshold Voltage and Drain Current Investigation of Power MOSFET ZVN3320FTA by 2D Simulations

Abstract

Power electronic devices used in space shuttles experience degradation due to their sensitivity towards surrounding radiations. Generally, Metal-Oxide Semiconductor Field Effect Transistors (MOSFET) are used in these devices because of their fast switching speed and low power consumption capabilities. Ionizing radiation causes induced charge to build-up which damages the electrical characteristics of the MOSFET. This study investigates the threshold voltage shifts and drain current degradation for N-channel power MOSFET ZVN3320FTA by simulating experimental data on COMSOL Multiphysics. Total Ionization Dose (TID) degrade the oxide layer of MOSFETs by inducing interface-trap and oxide-trap charges. Generation of these excessive electron-hole pairs eventually causes threshold voltage shifts and current degradation.

Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

“…This makes this device practicable to be installed in both high blocking voltage and high current within a compact piece of silicon [3]. Hence, due to this advantages, most of the vertical MOSFET was designed for switching applications and they are used in both on-state and off-states [4][5][6][7][8][9][10].…”