Radiation effects in high-disperse metal media and their application in powder metallurgy

Zaykin, Yu.A.; Aliyev, Bakhodir

doi:10.1016/s0969-806x(01)00583-7

Cited by 19 publications

(15 citation statements)

References 2 publications

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“…This increase in the current may be attributed to the healing effect (Zaykin and Aliyev 2002). During the process of film deposition, some intrinsic defects are always formed.…”

Section: Resultsmentioning

confidence: 96%

“…The recombination of defects reduces the resistivity of thin film, giving rise to an increase in the current. The critical dose dependence on the film thickness can also be understood in terms of the healing effect (Zaykin and Aliyev 2002). Accordingly, thicker films require much higher radiation doses for healing in comparison to thinner films.…”

Section: Resultsmentioning

confidence: 99%

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Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

Maity

Sharma

2008

Bull Mater Sci

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Gamma radiation induced changes in the optical and electrical properties of tellurium dioxide (TeO 2 ) thin films, prepared by thermal evaporation, have been studied in detail. The optical characterization of the as-deposited thin films and that of the thin films exposed to various levels of gamma radiation dose clearly show that the optical bandgap decreases with increase in the gamma radiation dose up to a certain dose. At gamma radiation doses above this value, however, the optical bandgap has been found to increase. On the other hand, the current vs voltage plots for the as-deposited thin films and those for the thin films exposed to various levels of gamma radiation dose show that the current increases with the gamma radiation dose up to a certain dose and that the value of this particular dose depends upon the thickness of the film. The current has, however, been found to decrease with further increase in gamma radiation dose. The observed changes in both the optical and electrical properties indicate that TeO 2 thin films can be used as the real time gamma radiation dosimeter up to a certain dose, a quantity that depends upon the thickness of the film.

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“…This increase in the current may be attributed to the healing effect (Zaykin and Aliyev 2002). During the process of film deposition, some intrinsic defects are always formed.…”

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

Maity

Sharma

2008

Bull Mater Sci

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“…Variation of the optical bandgap with gamma radiation dose for the thin films of (TeO 2 ) 0·9 (In 2 O 3 ) 0·1 of thickness, 220 nm. increase in the current may be attributed partly to the healing effect (Zaykin and Aliyev 2002) and partly to the lowering of the optical bandgap. Attempts are on to understand the decrease in the current at higher doses.…”

Section: Resultsmentioning

confidence: 99%

Effect of gamma radiation on electrical and optical properties of (TeO2)0·9 (In2O3)0·1 thin films

Sharma

Maity

2011

Bull Mater Sci

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We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO 2 ) 0·9 (In 2 O 3 ) 0·1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The currentvoltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose dependences of the optical bandgap and energy width of band tails of the localized states. The increase of the current with the gamma radiation dose may be attributed partly to the healing effect and partly to the lowering of the optical bandgap. Attempts are on to understand the decrease in the current at higher doses. Employing dose dependence of the current, some real-time gamma radiation dosimeters have been prepared, which have been found to possess sensitivity in the range 5-55 μ μ μGy/μ μ μA/cm 2 . These values are far superior to any presently available real-time gamma radiation dosimeter.

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“…Metals made of powders preliminary irradiated by electrons or gammairradiation are characterized by the absence of big pores and fine homogeneous grain structure. The average sizes of grains being 4¯5 times lower than that in conventional technology [24].…”

Section: Optical Propertiesmentioning

confidence: 87%

“…Figure 6 shows dependence of the normalized current (I-I 0 )/I 0 versus radiation dose under an applied voltage of 2 V for TeO 2 thin films. While irradiation usually leads to the creation of structural defects, the healing effect of irradiation is also known [5,24]. Metals made of powders preliminary irradiated by electrons or gammairradiation are characterized by the absence of big pores and fine homogeneous grain structure.…”

Section: Optical Propertiesmentioning

confidence: 99%

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Arshak

Korostynska

2002

Sensors

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Thin films of Tellurium dioxide (TeO2) were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

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Radiation effects in high-disperse metal media and their application in powder metallurgy

Cited by 19 publications

References 2 publications

Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

Effect of gamma radiation on electrical and optical properties of (TeO2)0·9 (In2O3)0·1 thin films

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

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