Radiation Effects in Metals

Leteurtre, J.

doi:10.1007/978-1-4684-1015-0_15

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Because of the migration energies for interstitials ε m i = 0.12 eV, 16 vacancies ε m v = 0.7 eV, 17 and Ar interstitials ε m Ar = 0.7 eV 18 , all three types of the simplest defects are mobile already at 300 K, i.e., without sample annealing.…”

Section: Model a General Approachmentioning

confidence: 99%

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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The evolution of argon-filled nanocavities in a copper crystal under annealing is studied experimentally and theoretically. The subsurface argon-filled nanocavities are formed after a short annealing at a temperature ∼1000 K by coalescence of subsurface defects initially created by argon implantation. The further prolonged annealing at a temperature above 1075 K leads to decomposition of the nanocavities and diffusion of implanted argon out of the sample. According to a simple analysis, the mechanism of the nanocavity formation is governed not only by the migration of simplest defects, such as vacancies and argon and copper interstitials, but also to a large extent, by diffusion and interaction of the complexes of these simplest defects. The experimental studies with x-ray photoelectron spectroscopy and scanning tunneling microscopy and spectroscopy provide valuable data sets of the density of nanocavities and their size and depth distribution. Based on the experimental results, a theoretical model is developed. The calculation with the model proves that the growth of the nanocavities is mainly determined by the temperature-induced migration of vacancy-argon complexes. By combining the experimental data with the simulation results, the migration energy of these kinds of complexes is estimated ∼2.55-2.75 eV. Moreover, the calculation with our model provides the estimate of the dissociation energy of a multiple complex, consisting of two vacancies and two argon atoms, as 1.10-1.18 eV. These parameters, reported in this article, play a key role in the description of the kinetics of the growth and decomposition of nanocavities.

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Section: Model a General Approachmentioning

confidence: 99%

Temperature-induced evolution of subsurface nanocavities in argon-implanted copper

et al. 2011

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“…Pure vacancies in copper are already mobile below room temperature, and the experimental estimate for the migration energy is about 0.72 eV [15], based on the assumption that the stage III recovery is caused by vacancy migration. We calculated the vacancy migration energy in bulk by moving a nearest copper atom from a lattice site to a vacant site by small steps.…”

Section: Vacancy Migrationmentioning

confidence: 99%

Argon and neon trapping near copper surfaces

Kuhalainen¹,

Manninen²,

Kautto³

1998

J. Phys.: Condens. Matter

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The binding energies of argon and neon impurities trapped below copper surfaces have been studied using a two-component effective-medium theory. The impurities are placed at various interstitial and substitutional sites and at divacancies within the first few surface layers, and the local energy minima as well as diffusion paths have been calculated taking into account full relaxation of the copper atoms. The results differ clearly from those obtained for bulk copper and are different for different surfaces. The results suggest that argon and neon are diffusing out from copper via a vacancy mechanism, with the help of a divacancy, or the impurity-vacancy pair dissociates clearly below the surface layer.

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