Radiation Effects in MOS Oxides

Schwank, J.R.; Shaneyfelt, M.R.; Fleetwood, D.M.; Felix, J.A.; Dodd, P.E.; Paillet, Philippe; Ferlet-Cavrois, V.

doi:10.1109/tns.2008.2001040

Cited by 774 publications

(396 citation statements)

References 127 publications

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“…Switching in 1T-TaS 2 Charge Density Wave Devices in oxide layers and at interfaces in field-effect transistors (FETs) [3]. These can result in shifts of the threshold voltage, increases in static current leakage, errors in bit reading, and, eventually, in complete circuit and/or system failure [1], [2].…”

Section: Total-ionizing-dose Effects On Thresholdmentioning

confidence: 99%

“…These can result in shifts of the threshold voltage, increases in static current leakage, errors in bit reading, and, eventually, in complete circuit and/or system failure [1], [2]. Strategies for increasing the radiation resilience of electronic devices typically include improving oxide quality [4], adopting silicon-on-insulator technology [5], and/or using III-V transistors with no oxide layers [6].…”

Section: Total-ionizing-dose Effects On Thresholdmentioning

confidence: 99%

See 1 more Smart Citation

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Liu

Zhang

Liang

et al. 2017

IEEE Electron Device Lett.

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-The 1T polytype of TaS 2 exhibits voltagetriggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T -TaS 2 at doses up to 1 Mrad (SiO 2 ). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T -TaS 2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T -TaS 2 , are promising for applications in high radiation environments.

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Section: Total-ionizing-dose Effects On Thresholdmentioning

confidence: 99%

Section: Total-ionizing-dose Effects On Thresholdmentioning

confidence: 99%

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Liu

Zhang

Liang

et al. 2017

IEEE Electron Device Lett.

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“…So the oxide-trap charges in the gate oxide decrease. 10 Though the interface traps have enough time to be built sufficiently and even be saturated, they induce the flat-band and threshold voltage shift which tends to compensate the shift induced by the oxide-trap charges. So the tendency for the V S to decrease at 0.01 rad(Si)/s is the least in this paper.…”

Section: A Dose Rate Effects On Unbiased Ccds Induce Saturation Outpmentioning

confidence: 99%

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Wang

Chen

et al. 2015

AIP Advances

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The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.

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“…Relatively less complex fabrication and low energy consumption makes MOS technology superior than contemporary ones, however, in a nuclear radiation environment, the MOS structure will be sensitive and its electrical easily balance disturbed, making these components having a high potential to experience malfunctioning [1]. Therefore tested electronic components are extremely necessary to operate in such nuclear radiation environment.…”

Section: Introductionmentioning

confidence: 99%

Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

Haider

Chee

Hassan

et al. 2016

AIP Conference Proceedings

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Radiation Effects in MOS Oxides

Cited by 774 publications

References 127 publications

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

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