Radiation effects of fast neutrons in silicon diffused detectors

Abstract

With a new method, the .ratio of the thermal emission probabilities of the carriers a t the acceptor level E, ( E , -0.39 eV) induced in silicon by fast neutron irradiation, e,/ep = 500 at 300 K, and t h e defect introduction rate, 7 = 3.2 cm-l, are determined. These results are used for designing a silicon detector with p+-n diffused junction used for the spectrometry and dosimetry of fast neutrons for medical and biological purposes. HOBbIM MeTOnOM OIIpenenHmTCR COOTHOUleHHe BePOHTHOCTeB TeIlJIOBOfi 3MMCCMH HOCM-Teneii Ha aH~eHTOpHOM YpOBHe E, ( E , -0,39 ev), BBeAeHHbIM M3JIyseHMeM 6bICTPbIMH HefiTPOHaMH, en/ep = 500 IIPM 300 K, M CKOPOCTb BBeneHMH ne@eIcTOB ' Y) = 3.2 Cm-'. 3 T M pe3yJIbTaTbI HCIIOJIb30BaJIMCb nJlR IIpOeKTHpOBaHHR IcpeMHMeBOrO nH@@Y3HOHHOrO p+-n HeTeRTOpa, yIIOTpe6JIeHHbIM nJIH CIIeKTpOMeTpMH M H03MMeTpHH 6bICTPbIX HeiiTPOHOB B M~~H K O -~M O J I O~M~~C K M X npMKnanHbxx aanasax.