Radiation efficiency of heavily doped bulk n-InP semiconductor

Abstract

Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss-Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination but is strongly influenced by photon recycling. Temperature dependence of the decay time suggests Auger recombination as the dominant non-radiative process at room temperature. Radiative quantum efficiency has been evaluated at different doping levels and at 2×10 18 cm -3 it is found to be as high as 97%, which makes n-InP suitable for scintillator application.

Effects of thermal treatment on radiative properties of HVPE grown InP layers

“…The degradation is definitely not a surface effect, as is evident from photoluminescence experiments with the highly penetrating 930-nm radiation that excites carriers far from the surface (penetration depth ~ 10 µm). The lifetime measurements [11] have also confirmed that the degradation is not a surface effect.…”

“…Moreover, our studies of optical and luminescent properties of InP Acrotec wafers [9] showed uniquely high radiative efficiency exceeding 98% at room temperature for moderately n-doped crystals [11,4]. Further studies, however, revealed a fatal degradation of the high-efficiency wafers after high-temperature treatment, unavoidable in subsequent epitaxial growth of lattice-matched photodiodes.…”

Carrier Recombination Dynamics in Sulfur-Doped InP Nanowires

“…The radiative recombination at higher doping level is expected to become faster as every hole can recombine with one out of a large number of excess electrons. 33 It is important to note that within this explanation if all photogenerated charges would recombine radiatively the overall PL Q should not change with the doping level even though the rate of the radiative recombination increases. Apparently, if all holes eventually recombine with either photogenerated electrons or electrons originating from ionized donors the same number of PL photons is produced, which is equal to the number of absorbed excitation photons.…”

Enhanced Light Output from the Nano-Patterned InP Semiconductor Substrate Through the Nanoporous Alumina Mask

“…1 Owing to its optical properties, InP is also a very important material for solid-state optical devices such as solar cells, semiconductor lasers, and light-emitting diodes (LEDs). [2][3][4][5] Due to its direct bandgap (1.34 eV), InP is very suitable for solar cells. 3 Solar cells using InP have been found to have higher conversion efficiency and higher radiation resistance than other semiconductors.…”