Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures

Bracht, H.; Pedersen, Jan; Zangenberg, N.; Larsen, A. Nylandsted; Häller, E. E.; Lulli, G.; Posselt, M.

doi:10.1103/physrevlett.91.245502

Cited by 73 publications

(61 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This prediction is in good agreement with experimental findings from both diffusion (Bracht et al, 2003) and positron annihilation Kuitunen, Saarinen, and Tuomisto, 2007) studies where thermal formation of vacancies requires rather high temperatures, even when the vacancies are formed right next to donors in highly n-type material. Hence, the vast majority of positron annihilation studies on vacancies in silicon have been performed on irradiated or implanted material, with possibly the only exception being highly n-type doped Si (see Sec.…”

Section: Elemental Semiconductors Si Ge and Csupporting

confidence: 81%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

View full text Add to dashboard Cite

Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.

show abstract

Section: Elemental Semiconductors Si Ge and Csupporting

confidence: 81%

Defect identification in semiconductors with positron annihilation: Experiment and theory

2013

View full text Add to dashboard Cite

show abstract

“…This holds for both the thick (#1 and #2) and thin (#3) isotope structures. Usually, a depth dependence of self-diffusion under irradiation is expected because the surface of a material is believed to be an efficient sink for native defects 34 . Hence the native defect concentration established under irradiation should decrease near the surface and with it the self-diffusion.…”

Section: Resultsmentioning

confidence: 99%

Radiation-enhanced self- and boron diffusion in germanium

et al. 2013

Self Cite

View full text Add to dashboard Cite

We report experiments on proton irradiation enhanced self-and boron (B) diffusion in germanium (Ge) for temperatures between 515 • C and 720 • C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction and the interstitialcy and dissociative diffusion mechanisms. The numerical simulations ascertain concentrations of Ge interstitials and B-interstitial pairs that deviate by several orders of magnitude from their thermal equilibrium values. The dominance of self-interstitial related defects under irradiation leads to an enhanced self-and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI that are compared with recent results of atomistic calculations. The behavior of self-and B diffusion in Ge under concurrent annealing and irradiation is strongly affected by the property of the Ge surface to hinder the annihilation of self-interstitials. The limited annihilation efficiency of the Ge surface can be caused by donor-type surface states favored under vacuum annealing but the physical origin remains unsolved.

show abstract

“…16 and 17). The behavior of self-and dopant diffusion in Ge under irradiation strongly differs from that in Si 147 and, accordingly, must be due to properties of Ge that strongly differ from Si. First, the equilibrium diffusion of As and P under irradiation demonstrates that the concentration of V in Ge under irradiation does not significantly deviate from thermal equilibrium.…”

Section: Interstitial Mediated Diffusion Under Proton Irradiationmentioning

confidence: 99%