Radiation-hardened phototransistor

Matzen, W.T.; Hawthorne, Robert A.; Kilian, W.T.

doi:10.1109/23.124112

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…It has been demonstrated that in contrast with the lack of any effect of neutron-induced damage on P-I-N photodiode responsivity to neutron fluences in excess of lx10L4 n/cm2, phototransistors show significant degradation in photocurrent even below 1~1 0 '~ n/m2 because of the long minority carrier lifetime in the base region. However, more recent efforts [53] have resulted in hardening of Si bipolar phototransistors to the point where they can be used at fluences above 1013 n/cm2, In the optically active region of the hardened phototransistor, diffusion limited collection was minimized in favor of collection in the depletion layer through proper design as we have discussed above. The neutron-induced degradation of gain in the transistor portion was minimized by employing a very narrow base region width.…”

Section: Photodetectorsmentioning

confidence: 95%

Radiation effects considerations for the application of photonics in space systems

Barnes

Swift²,

Johnston³

et al. 1998

1998 IEEE Aerospace Conference Proceedings (Cat. No.98TH8339)

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Ken .label @ g sfc.nasa.gov (301) 286-9936Abstruct-As civilian and military spacecraft continue to evolve, meeting performance demands will become particularly challenging because performance levels will be constrained by severe cost and weight restrictions. To meet these challenges, new technologies, such as photonics, w i l l be employed that can provide desired performance levels within the framework dictated by these constraints. For the insertion of a new technology into a spacecraft to be successful, the radiation hardness assurance (RHA) of the technology must be established so that the mission is not jeopardized by exposure to the space radiation environment. In this paper we discuss the RHA issues associated with the infusion of photonics into space systems, both military and civilian. These issues w i l l be contrasted with similar problems that have been encountered in the more traditional area of RHA for Si microcircuits.

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Section: Photodetectorsmentioning

confidence: 95%

Radiation effects considerations for the application of photonics in space systems

Barnes

Swift²,

Johnston³

et al. 1998

1998 IEEE Aerospace Conference Proceedings (Cat. No.98TH8339)

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“…Specifically, in the total dose effect of ionization, the radiation causes an increase in the photocoupler photocurrent and non-luminous defects, thereby adversely impacting its transmission efficiency. So far there have been many studies reporting the TID effects in light-emitting and photovoltaic conversion devices [7][8][9][10][11][12][13], but there are fewer relevant reports for photocouplers [14,15]. In particular, the mechanism of the effect of bias conditions on the TID effects in photocouplers is still unclear.…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanisms of total ionizing dose effect in photocouplers

He,

Liu,

et al. 2024

Advanced Fiber Laser Conference (AFL2023)

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This article investigates the degradation mechanisms of total ionizing dose (TID) effects in photocouplers under different bias conditions. The irradiation measurement of silicon-based photocoupler devices is carried out by using a 60 Co γ-ray source under various radiation bias conditions. The results of the test indicate that the current transfer rate (CTR) of the photocoupler reduces with an increase in the total dose. In addition, the non-luminous traps produced by the TID irradiation in the diffusion region of the PN junction of the light-emitting diode within the photocoupler cause more severe total dose effects when the input current of the device is low. This could be attributed to the charges being captured more easily in such scenarios. These representative results support the reliable application of the photocoupler devices in space radiation environments.

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