Radiation hardness of a wide spectral range SiPM with quasi-spherical junction

Römer, Julius; Garutti, E.; Schmailzl, Wolfgang; Schwandt, J.; Martens, Stephan

doi:10.1016/j.nima.2022.167792

Cited by 2 publications

(2 citation statements)

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“…Another recent study of TAPD clarified its radiation-induced degradation characteristics [ 87 ]. As observed, under irradiation with neutrons up to a fluence of 10

, the DCR (including correlated noise) of the TAPD increases from 1 MHz to 2 GHz (estimated) while the DCR of a standard KETEK SiPM of the same 15

m pitch and the same 1 mm

area increases from 0.4 to 30 GHz (estimated), i.e., it becomes approximately 15 times higher in an absolute value ( Figure 13 b).…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

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Avalanche Photodiodes and Silicon Photomultipliers of Non-Planar Designs

Vinogradov

2023

Sensors

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Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs.

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“…Another recent study of TAPD clarified its radiation-induced degradation characteristics [ 87 ]. As observed, under irradiation with neutrons up to a fluence of 10

, the DCR (including correlated noise) of the TAPD increases from 1 MHz to 2 GHz (estimated) while the DCR of a standard KETEK SiPM of the same 15

m pitch and the same 1 mm

area increases from 0.4 to 30 GHz (estimated), i.e., it becomes approximately 15 times higher in an absolute value ( Figure 13 b).…”

Section: Non-planar Apd and Sipm Designsmentioning

confidence: 99%

“…( b ) Dependence of estimated DCR including correlated noise on overvoltage in comparison with KETEK SiPM of the same 15-

m pitch. Reproduced with permission from [ 87 ]; published by IEEE, 2023.…”

Section: Figurementioning

confidence: 99%